Papers by Keyword: Memory

Abstract: This paper summarizes a TEDx Talk that the European physics professor Ille C. Gebeshuber, who has been living in South East Asia for nearly five years now, gave to a live audience of 800 in Kuala Lumpur, Malaysia, in July 2012. A similar talk is also given as an invited lecture at the 4^th International Conference of Bionic Engineering in China in August 2013. The talk highlights the importance of news ways of doing science and of doing engineering that are needed to successfully address the major challenges humankind is currently facing, and how a generalistic approach synergistically combining Eastern and Western thinking might help in this respect. Biomimetics is stressed as an integrated, generalist way of learning from living nature, and as best practice example for developing new approaches that are based on understanding rather than learning by heart, with memory, reason and imagination as pillars, bridging fields of specialization and of education and thereby blending the knowledge of single isolated scientists and specialist scientist networks to a wisdom of the whole, powerful enough to help us successfully address our major problems.

Abstract: Resources of memory are frequently used times without number for reducing cost of control system. Rewriting in memory would cause occasional hardware conflict when especial data are inputted or are calculated, thereby system faults even accidents are elicited. Origin of occasional malfunction was analysed in automatic control system, necessity of program storage separate from data storage was discussed, and the notion was put forward that resource allocation of memory should be compatible with the system function. So dead halt owing to codes cover each other could be avoided, and reliability of measurement or control system could be effectively improved.

Abstract: The resistance switching behavior in sputtered Ti/ZrO₂/Pt sandwiched structure was investigated for nonvolatile memory application. Multiple current-voltage measurements reveal highly uniform distribution of the conduction current and switching voltage. This bipolar resistive switching driven by bias of proper magnitude and polarity is interpreted by filament model. The reset threshold increases with the compliance setting imposed on the turn-on transition, while the switching currents in high and low resistance states are not varied for different top-electrode areas. Both characteristics are ascribed to the electro-chemical reactions of field-induced reduction-oxidation processes.

Abstract: We assessed the effectiveness and mechanism of action of Soybean Isoflavones on learning and memory and Caspase-3 levels in the hippocampus of rats after Morris water maze (MWM test). Soybean Isoflavones (200,400 or 800 mg/kg/d) were administered by intragavage once daily for 14 consecutive days. The Morris water maze test was used to evaluate the ability of Soybean Isoflavones to increase learning and memory impairment. The levels of Caspase-3 in hippocampus of rats were detected by Westernblot after MWM test. Compared to untreated controls (P<0.01), MWM could be prolonged after Soybean Isoflavones treatment (P<0.05 for="" low="" and="" intermediate="" dose="" groups="" westernblot="" analysis="" showed="" that="" the="" protein="" expression="" of="" caspase-3="" was="" decreased="" in="" different="" concentration="" soybean="" isoflavones="" i="">P<0.05 and="" i="">P<0.01, respectively). The results suggest that Soybean Isoflavones is effective in improving the learning and memory in rats , the mechanism of which may be related Caspase ways.

Abstract: The C8051F02x microcomputer and its saving structure are introduced, I/O function expanding and connecting are analyzed for its data. The exterior data and the structure of the memory are elaborated with the technique expanding request. Access or expansion of external data memory, external memory interfaces (EMIF). Its data memory address space can be flexibly implemented by the on-chip internal memory can be extended to chip memory. EMIF can be configured as address / data multiplexed or non-multiplexed mode. When big capacity FLASH memorizer is needed, this paper provides a realistic design and methodology for microcomputer and string big capacity FLASH of total line, through the setup and analysis of the SPI of the C8051F02x MCU inner part.

Abstract: For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.

Abstract: Focusing on the study of the application of voice single-chip microcomputer of pedestrian voice unit in electric vehicles, this paper mainly discusses and analyzes that how to drive the voice chip of pedestrian voice unit. Acted as voice part of pedestrian voice unit in electric vehicles, voice single-chip microcomputer is used not only to achieve the better quality and stability, but also to play voice assembly and insert perfect mute by using the related voice chip software compared to the other similar simulate voice. This paper proposes the solution of installing pedestrian voice unit that eliminates radically the potential safety hazard of “being too quiet” in electric vehicles, thereby further promotes the popularization of electric vehicles.

Abstract: Power network planning is a NP hard problem difficult to be solved. It can be contributed to similar TSP problem. Aiming at the slow convergence speed of the traditional immune clonal selection algorithm (ICA), adaptive immune clonal selection algorithm without memory（AICA）and adaptive immune clonal selection algorithm with memory(AICAM) are proposed respectively based on the combination of adaptive algorithm of clonal probability, immune probability , and group disaster algorithm. The two proposed algorithms have been applied to Power network planning problem. The adaptive algorithm has strong global search ability and weak local search ability at early evolution. Global search ability is weakened and local search ability is enhanced with the process of evolution in order to find global optimal point. The application of group disaster algorithm can enhance the diversity of the population and avoid the premature problems to some extent. Simulation results indicate that compared with the traditional immune clonal selection algorithm(ICA), the proposed algorithms can enhance the diversity of the population, avoid the premature problems, and can accelerate convergence speed in some extent.

Abstract: The article probes the connotations of urban color, expounds the historical and cultural inheritance role of urban color,and expounds the value of urban color for the ideal urban environment construction . The article probes the application path of traditional color in modern city, provides the strategy to achieve the ideal of urban color.

Abstract: In recent years, the interest in the application of organic materials in electronic devices (light emitting diodes, field effect transistors, solar cells), has shown a rapid increase. Polymer memory devices (PDMs) is a very recent addition to the organic electronics. The polymer memory devices can be fabricated by depositing a blend (an admixture of organic polymer, small organic molecules and metal or semiconductor nanoparticles) between two metal electrodes. We demonstrate the memory effect in the device with simple structure based on blend of polymer with different materials like ionic compound (NaCl), ferroelectrical nano-particles (BaTiO3) and small organic molecules In 2007 Paul has proposed a model to explain memory effect a switching between two distinctive conductivity states when voltage is applied based on electrical dipole formation in the polymer matrix. Here, we investigate if our memory devices based on different types of materials are fitted with the proposed model.