Papers by Keyword: Memory

Abstract: By comparing and analyzing various orders coefficient curves of fractional order, this article studies the influence of order to the extraction of signal memory information, and then extends the result to image processing, as well as analyzes the influence of fractional order differential order to texture information extraction, then gives the order scope of texture information extraction.

Abstract: As the development of electronic technology and automotive industry, vehicle onboard computers are playing very important roles. Vehicle computer receive information from sensors and other devices. Base on the information, computer makes decision. When computer is running and making decision, other parts back up computer. Vehicle computer can turn on and off actuators rapidly.

Abstract: Objective: to study the effects and mechanisms of ultrasonic on ability of learning and memory in Kunming mice. Methods: changing the time of irradiation can get different dose of ultrasonic. Using Morris water maze analyzes the activity of Kunming mice on different time points. Remain the same ultrasonic irradiation time, and find the rule of platform latency by comparing the ultrasonic method with no ultrasonic. According to statistics analyzing related experiments data by SPSS and the theory of ultrasonic biological effects, how ultrasonic affects the ability of learning and memory in mice can be found. Results: small doses of ultrasonic have positive significance on the learning and memory ability in mice .But more than regular doses, the ability of learning and memory will be badly damage. After ultrasonic irradiation, the latency is discrete distribution while no ultrasonic irradiation the latency is stable. Conclusion: ultrasonic has certain effects on the learning and memory ability in Kuming mice. Its mechanism is the mechanical, thermal, cavitation effect of ultrasonic.

Abstract: SiO₂ thin films were fabricated as resistive layers of Cu/SiO₂/Pt devices to investigate resistive switching properties. A thermal annealing was performed to allow for the diffusion of Cu ions into the SiO₂ thin films, leading to the formation of Cu-doped SiO₂ layers. Occurrence probabilities of the resistive switching and initial resistance-states of the devices were influenced by SiO₂ thickness, which was dependent on the Cu diffusion status within the SiO₂ layer. The resistive switching behaviors were characterized by the voltage sweeping mode and the current sweeping mode. The current sweeping mode provided a desired compliance current to well control the resistive switching from the high resistance-state to the low resistance-state (SET). Therefore, the large RESET (from the low resistance-state to the high resistance-state) current was not inherent in the device, due to poor control of the compliance current by the voltage sweeping mode. The current sweeping mode is a simple method to characterize the RESET current.

Abstract: Cu_xO and SiO₂ thin films were deposited using a radio-frequency magnetron sputter on Pt/Ti/SiO₂/Si substrates to form SiO₂/Cu_xO/Pt and Cu_xO/Pt structures. The current-voltage characteristics were measured by DC voltage sweeping using a tungsten (W) probe. The two structures needed a large voltage to initiate the first resistive switching; this sweep was called the forming process. Afterwards, the resistances of the two structures could be switched reversibly between the low-resistance-state (LRS) and high-resistance-state (HRS) by applying a DC voltage. The conduction mechanisms of the LRS and the HRS were dominated by Ohmic conduction. Structures with non-destructive readout characteristics and long retention time were suitable for use in non-volatile memory. The difference between resistive switching in W-probe/SiO₂/Cu_xO/Pt and W-probe/Cu_xO/Pt structures was investigated. The additional SiO₂ layer decreased the switching voltages and currents; this should be due to the presence of pinholes within the SiO₂ layer. The influence of SiO₂ thickness on the resistive switching characteristics was also investigated. The switching voltages and currents, except the forming voltage, decreased as the thickness of SiO₂ decreased. The conducting filament model with a thermochemical reaction was suggested to best explain the resistive switching behavior that was observed.

Abstract: Memory in the nature of primitive features and basic functions, which plays an important role in promoting all the developments from ancient times to nowadays, is the most fundamental form of human nature. This paper will, from both narrow dimensions and generalized dimensions hypothesize and analyze the connection between memory and human nature or our developments; the original feature and function of memory, thereby, will be revealed.

Abstract: The article seeks to analyze the importance of the former headquarters of the Board of Public Health – DGSP (Diretoria Geral de Saúde Pública), in implementing and institutionalizing Brazilian public health policies, and the importance for Brazil of its restoration and reuse as the Centro de Difusão Científica [Scientific Education and Research Centre]. Constructed (1905-1914) at the initiative of Oswaldo Cruz and designed by the Portuguese architect Luiz Moraes Júnior, the following aspects of the old headquarters of the DGSP are examined: the original site; economic and technical means used in construction; the reasoning, programmes and purpose behind its use; economic, physical and conceptual limits and conditions of space; the creators, their ideas and programmes; the architects, their training, works and methods; the buildings and their environmental surroundings throughout the 20th century; with the City of Rio de Janeiro. The article also analyses the various proposed interventions: structural reinforcement, modernization of the installations, recovery of the construction materials and systems, as well as historic and architectural values; the original forms, volumes and spaces of the buildings. The current initiative taken by the Instituto Nacional do Câncer - Inca- of the Health Ministry, current owner of the property, recovers and preserves a reference point for the origin, evolution and institutionalization of Brazilian public health policies. A modern scientific education and research centre for researchers, health professionals, doctors and residents, as well as the general public, is to be installed in the buildings.

Abstract: The presence of damage or cracks modifies the elastic properties of a sample, introducing nonlinear components in the elastic response to an ultrasonic excitation. Among other effects, we discuss here conditioning and memory, i.e. the transition of the sample to a new (non equilibrium) elastic state when perturbed by a strain, even at a relatively low amplitude. A quantification of these phenomena can be the basis for a novel Nondestructive Method to evaluate the integrity of a structural or mechanical component.

Abstract: Organic and polymer based electronic devices are currently the subject of a great deal of scientific investigation and development. This interest can be attributed to the low cost, easy processing steps and simple device structures of organic electronics when compared to conventional silicon and inorganic electronics. In the field of organic electronic memories, non-volatile, rewritable polymer memory devices (PMDs) have shown promise as a future technology where cost and compatibility with flexible substrates are important factors. In this paper PMDs based on active layers containing an admixture of polystyrene, gold nanoparticles and 8-hydroxyquinoline will be presented, showing the devices’ electrical characteristics and memory performance attributes, and where possible discussing possible mechanisms of operation.

Abstract: Non volatile memory devices have been developed using diphenyl bithiophene derivatives (DPBT) as active layer. The devices, developed with a two terminal vertical structure where the spin cast organic layer is sandwiched between two electrodes, behave as bistable conductance switching memory cells; the modification of the electrodes material and of the organic layer composition introduces significant changes in the electrical behaviour, that give some indications on the molecular origin of the electrical bistability. These data are enriched by in-situ spectroscopic experiments.