Papers by Keyword: Metallic Thin Film

Abstract: Diffusion-Induced Recrystallization (DIR) is investigated in size mismatched thin film interdiffusion couples. New grains formed in the diffusion zone are characterized by distinctive composition levels which seem to be characteristic to the interdiffusing materials. In this paper, we analyzed sputter-deposited Ni/Pd films. The lattice mismatch and the driving force are varied by pre-alloying one side of the diffusion couples. Recrystallization was detected after heat treatment by transmission electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffractometry. We determined characteristic concentrations from XRD data. Remarkably, the difference between the concentration inside newly formed grains and that of the parent layers remains practically constant, when initial layer concentration is varied. Also, the characteristic compositions are nearly independent of temperature. A thermo-mechanic model has been derived, which demonstrates that the observed concentration differences are such that the stress in front of the moving grain boundary reaches a maximum close to the ideal strength of the host material.

Abstract: Diffusion-induced recrystallization (DIR) is investigated in Au/Cu and Ag/Pd thin-film interdiffusion couples. It is experimentally demonstrated that several generations of new grains are formed inside the diffusion zone by a cascade-like process. Each generation is distinguished by a characteristic composition level. In order to understand the observed composition levels quantitatively, a thermo-mechanic model has been derived, which determines the thermo-elastic driving force to the grain boundary. By the model, it is shown that those grains dominate the diffusion zone, which develop the maximum possible stress in front of the moving boundary.

Abstract: Recently, it was demonstrated that copper thin films show good adsorption characteristics for organic polar and non-polar compounds. Also, these films when used in small cavities can favor preconcentration of these organic compounds. It is also known that copper oxide can provide catalysis of organic compounds. Therefore, the aim of this work is the study of copper thin film catalysis when used in small cavities. Copper thin films, 25 nm thick, were deposited on silicon and/or rough silicon. These films do not show oxide on the surface when analyzed by Rutherford backscattering. Also, Raman analysis of these films showed only silicon bands, due to the substrate, however infrared spectroscopy shows oxide bands for films exposed to organic compound aqueous solutions. Cavities with copper films deposited inside were tested with a continuous flow of n-hexane, acetone or 2-propanol admitted in the system. The effluent was analyzed by Quartz Crystal Microbalance. It was shown that n-hexane or acetone can be trapped. The system also shows good reproducibility. Tests of catalysis were carried out using Raman spectroscopy and heating the films up to 300°C during 3 minutes after exposure to n-hexane, 2- propanol and acetophenone – pure or saturated aqueous solution. After the exposure, Raman spectra present intense bands only for 2-propanol, indicating that adsorption easily occurs. However, after heating with all solutions it was not found only silicon bands. Raman microscopy after heating also showed copper oxide cluster formation and, eventually, graphite formation. Although the heating provides oxide copper formation, this reaction does not produce a high amount of residues, which means that catalysis is possible in this condition. Thus, a simple device using copper thin films can be useful as sample pretreatment on microTAS development.