Papers by Keyword: MgO Thin Film

Abstract: MgO thin film was deposited on soda lime glass substrate by sol-gel process. MgO thin film with the (200) preferred orientation were prepared by heat-treated at 300~500°C for 10 min. The crystallization, microstructure and electrical properties with various parameters of MgO thin films were investigated. Consequently, it was shows that the (200) preferred orientation of MgO thin film could be obtained as the heating temperature was increased. At heating temperature of 500°C, MgO thin film was composed of columnar crystals with a size of 120 nm. The dielectric constant of the (200) preferred orientation of MgO thin film at 1 kHz without the electric field was 7.2, with a dissipation factor of 4%. When the electric field was increased, the dielectric constant approaches to 7.9 with the dissipation factor of 2.1%. The refractive index of MgO thin film depended on the film thickness. The refractive index of 250 nm thickness was 1.70.

Abstract: Ultrasonic spray pyrolysis has been applied to deposit MgO thin films on Si(100) and quartz glass substrate. The microstructures and properties of the as-grown MgO thin films were examined by X-ray diffraction, scanning electron microscopy, spectrophotometer and semiconductor resistivity meter. The results indicates that the MgO thin films deposited under optimal conditions shows smooth and dense surface without visible pores or defects over the substrate, and as well as good thickness uniformity. Almost completely (100)-oriented MgO films with the transmission higher than 90% in UV/VIS region and the resistivity at least in the order of 107Ω-cm were obtained. MgO thin film with such a crystal quality seems to be very suitable for acting as a buffer layer for the subsequent epitaxial growth of films.