Papers by Keyword: Mg_xZn_1-xO

Abstract: The films of Mg_xZn_1-xO were prepared on ITO-coated glass substrates by sol-gel method at low temperature. The influence of Mg content x on microstructure and resistive switching behavior in Mg_xZn_1-xO films was systematically investigated. It was found that all Mg_xZn_1-xO samples exhibit a polycrystalline character with a single phase hexagonal wurtzite structure, irrespective of the Mg content x. With the increase of Mg content x, the V_set, V_reset, R_LRS and R_HRS/R_LRS of Mg_xZn_1-xO films increased, but the endure of Mg_xZn_1-xO films switching cycles decreased as the Mg content x is over 0.2 and exhibited a smaller degradation of resistance as the Mg content x is 0.1. The resistance switching mechanism was discussed.