Papers by Keyword: Microelectromechanical Systems (MEMS)

Abstract: This study selects a single crystalline Ni-Mn-Ga alloy by its exceptional actuator attributes, high actuation speed, precise position control, rapid response to external magnetic fields, and extended operational lifespan. Researchers venture into uncharted territory, aiming to harness the potential of Ni-Mn-Ga alloy to revolutionize micropump performance and refine fluid manipulation within miniature devices. The methodology at the heart of this endeavor involves the seamless integration of this specialized alloy with microdevice technology, giving rise to a set of unique pump components that substantially boost pump efficiency. Crucially, Ni-Mn-Ga is the chosen material for the active part of the micropump. At the same time, MEMS fabrication handles the passive elements, all facilitated by the 0.18 µm semiconductor technology and Sivalco TCAD simulation software. Computational simulations validate the alloy's suitability, impressively achieving an accumulated flow volume of 0.15 x 10e-4 µL in 10 microseconds. Beyond its scientific significance, this research bridges MEMS technology and magnetic-enabled smart materials, showcasing the remarkable capabilities of Ni-Mn-Ga alloy in significantly enhancing micropump performance. These innovative solutions promise to open doors to groundbreaking applications in microfluidic systems across many scientific and industrial domains.

Abstract: The goal of this study is to make selective etch possible for the next generation of MEMS(microelectromechanical systems) devices that are composed Ni-Mn-Ga and silicon layers. Due tothe large magnetic-field-induced strains of Ni-Mn-Ga, sensing and actuating components can be fab-ricated in the Ni-Mn-Ga layers. Other functional components can be manufactured in the silicon layer.Single crystalline Ni-Mn-Ga alloys that are grown by using the Bridgman vertical growth techniquehave so far obtained the largest magnetic field-induced strain (MFIS), a magnetic shape memory(MSM) effect. Similar to silicon wafers, Ni-Mn-Ga wafers are also sliced from crystal-oriented singlecrystalline ingots. To fabricate hybrid MEMS devices such as micromanipulators and robots, lab-on-chip containing micropump manifolds and valves, or vibration energy harvesters, the fabricationprocesses used for MEMS devices will be also used to fabricate components in the Ni-Mn-Ga layer ofthe hybrid MEMS devices. One of the most important processes for MEMS fabrication is the structur-ing of materials by chemical etching. The main goal of this study is to obtain evidence that the etchantetches silicon but not Ni-Mn-Ga and to identify an etchant that etches Ni-Mn-Ga but not silicon. Thepresent paper reports on a novel experiment in dissolving Ni-Mn-Ga alloys. An etchant compositionof 69% HNO3, 98% H2SO4, and CuSO4•5H2O is proposed for dissolving Ni-Mn-Ga alloys and thevariation in the dissolution rate by adjusting the concentrations of HNO3 and ultrapure water (UPW)is demonstrated. This etchant was demonstrated to etch Ni-Mn-Ga but not silicon. The HF+HNO3acidic solution commonly used for etching silicon does not dissolve Ni-Mn-Ga alloys.

Abstract: This paper examines the modeling, simulation and optimization of CMOS–MEMS integrated pressure sensor based on suspended gate MOSFET. The pressure Sensor consists of a square poly silicone suspended membrane, which is the movable gate of the NMOS. This NMOS is designed using 2 μm CMOS technology. The mathematical model describing the complete behaviour of the PSFET pressure sensor has been described. Finite element method (FEA) based COMSOL Multiphysics is utilized for the simulation of pressure sensor. The simulation results show that, the output current of the pressure sensor varied from 355 to 3624 μA as the pressure changed from zero to 180 kPa and high pressure sensitivity of 15,18μA/kPa. Furthermore, this study emphasizes on the influence of the channel geometric parameters on the aforementioned characteristics to optimize the sensor performance.

Abstract: We fabricated electrostatically-excited single-crystalline 4H-SiC microcantilever resonators with various thicknesses and lengths. Their resonant characteristics were investigated from room temperature (RT) up to 600°C. The resonant frequency of the cantilevers decreased with increasing temperature. From the results, the temperature dependence of Young’s modulus of single-crystalline 4H-SiC was obtained, i.e., 3% decrement with increasing temperature from RT to 600°C. The cantilevers with different thicknesses showed different temperature dependences of the quality factor. A 2-μm-thick cantilever exhibited a high quality factor (Q) (250,000) at RT and the Q decreased to 6,000 at 600°C, which can be explained by thermoelastic damping. On the other hand, a Q of a 0.45-μm-thick cantilever was still high (50,000) even at 600°C.

Abstract: We fabricated electrostatically actuated single-crystalline 4H-SiC microcantilever resonators. To realize a narrow gap between cantilevers and substrate, we etched a thin p-type SiC layer in n/p/n multilayer structure by doping-selective electrochemical etching. The resonant characteristics of the fabricated 4H-SiC microcantilevers were investigated under a vacuum condition. Electrostatic actuation of microcantilevers was successfully performed by applying 10 mV_rms ac voltage with 20 mV dc bias. The quality factor of 4H-SiC microcantilevers was above 100,000, which is about ten times higher than the quality factor of Si cantilevers with the same structure. Resonant characteristics were almost identical for mechanical actuation and electrostatic actuation.

Abstract: A new isolation optimization method of radio frequency (RF) microelectromechanical systems (MEMS) capacitive switches is carried out in this paper. We simplified the coplanar waveguide and the top movable electrode as two-port network. The existence of the maximum isolation of single switch is proved theoretically based on circuit model and S-parameters model. The isolation of the distributed switches with lossless transfer lines, which is the function of the transfer lines length and the impedance of metal beams, is described by mathematic expressions and simulated in a numerical method. We find that the isolation varies periodically with θ and f, which are the electrical length between metal beams of the distributed switches and the signal frequency. It achieves the maximum value 83dB at θ=π/2 for 2-beams switch. However, different from single beam switches, the distributed switches maximum isolation is near but not precisely at the resonance frequency f0. The bandwidth of RF signal can be widened to about 200% for 5-beams switch by using the proposed design method. The results will be useful for Resistance-Inductance- Capacitance parameters optimization of RF MEMS Capacitive switches.