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Articles by keyword: «Minority Carrier Lifetime»

• Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping
  Published in: Silicon Carbide and Related Materials - 2002 (p349)
• Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
  Published in: Silicon Carbide and Related Materials 2003 (p1365)
• Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2000 (p757)
• Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2005 (p493)
• Effect of Annealing Temperature on the Properties of Silicon Crystal
  Published in: Advanced Materials (p1323)
• Effect of the Si₃N₄ Coating on the Mc-Si Ingot in the Process of Multicrystalline Silicon Purification by Metallurgical Methods
  Published in: Advanced Material Science and Technology (p1311)
• Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
  Published in: Silicon Carbide and Related Materials 2006 (p921)
• Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p431)
• Influence of High-Temperature Processes on Multicrystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p235)
• Lifetime and Material Characteristics of Multicrystalline Silicon Measured with High Spatial Resolution
  Published in: Polycrystalline Semiconductors IV (p69)
• Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs
  Published in: Silicon Carbide and Related Materials 2004 (p909)
• Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p525)
• Nanosecond Risetime Pulse Characterization of SiC p⁺n Junction Diode Breakdown and Switching Properties
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1037)
• Optimization of the Specific On-Resistance of 4H-SiC BJTs
  Published in: Silicon Carbide and Related Materials 2005 (p1429)
• Polycrystalline Semiconductors: Structure-Property Relationships
  Published in: Polycrystalline Semiconductors IV (p105)