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Articles by keyword: «Mobility»

• 4H-SiC Delta-Doped Accumulation-Channel MOS FET
  Published in: Silicon Carbide and Related Materials 2001 (p1077)
• A New Representation of Grain Boundary Properties
  Published in: Aluminium Alloys 2002 - ICAA8 (p593)
• A P-Channel MOSFET on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p1401)
• A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1385)
• Abnormal Kinetic Properties of Grain Boundaries in Al Doped with Pb: Grain Boundary Motion and Thermal Extraction of Pb
  Published in: Diffusion in Materials DIMAT 1996 (p1493)
• Absorptive Fourier Transient Grating Spectroscopy in Indirect Semiconductors and Quantum Structures
  Published in: Ultrafast Phenomena in Semiconductors (p287)
• Accurate Localization of the Mobile Genomic Islands in Pseudomonas putida
  Published in: Advances in Environmental Science and Engineering (p3)
• AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation
  Published in: Silicon Carbide and Related Materials 2001 (p1527)
• An Evaluation of Meyer-Neldel Behaviour for Hopping Mobilities in Amorphous Polymeric Materials
  Published in: The Meyer-Neldel Rule (p27)
• Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
  Published in: Silicon Carbide and Related Materials 2003 (p621)
• Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices
  Published in: Silicon Carbide and Related Materials - 1999 (p1069)
• Atomistic Simulation of the Energy Barrier for Dislocation Movement in Si
  Published in: Advances in Fracture and Materials Behavior (p957)
• Barrier-Controlled Transport in Highly Doped Microcrystalline Silicon: Role of Interface States
  Published in: Polycrystalline Semiconductors VI (p225)
• Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p295)
• Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs
  Published in: Silicon Carbide and Related Materials 2011 (p1101)