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Articles by keyword: «Molecular Beam Epitaxy»

• Analysis of Interdiffusion Experiments in Al/Mn Artificial Multilayered Films and Impurity Diffusion of Manganese in Aluminum
  Published in: Diffusion in Materials - DIMAT 1992 (p617)
• Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)
  Published in: Silicon Carbide and Related Materials 2000 (p179)
• Characterization of Polycrystalline GaN Layers Grown on Alkali-Metal-Free Glass Substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Resonance Plasma
  Published in: Polycrystalline Semiconductors VII (p307)
• COMBE: A Powerful New Tool for Materials Science
  Published in: Trends in Advanced Materials and Processes (p1)
• Comparative Analysis of λ≈9µm GaAs/AlGaAs Quantum Cascade Lasers with Different Injector Doping
  Published in: Recent Developments in Advanced Materials and Processes (p29)
• Compliance at the GaSb/GaP Interface by Misfit Dislocations Array
  Published in: Advances in Innovative Materials and Applications (p85)
• Defect Formation in MBE Er-Doped Si Light-Emitting Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p779)
• Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy
  Published in: Defects and Diffusion in Semiconductors (p81)
• Defects in SiGe
  Published in: Defects in Semiconductors 19 (p83)
• Effect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiO_X-Si Structures
  Published in: Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices (p179)
• Effect of Thickness on the Structural, Electrical and Optical Properties of ZnO Films Deposited by MBE
  Published in: Advanced Materials and Processes (p1271)
• Electronic Surface Properties of Ultrahigh Vacuum Grown Polycrystalline CuGaSe₂
  Published in: Polycrystalline Semiconductors VII (p319)
• Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p617)
• GaN Quantum Dots on Sapphire and Si Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p1453)
• Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
  Published in: Silicon Carbide and Related Materials 2009 (p889)