Papers by Keyword: N-Type Semiconductor

Abstract: Stable electronic configuration between the interface of an n-type oxide semiconductor core and a p-type polymer shell is necessary in order to guarantee a consistent functioning core-shell structure. This research aims to use silane-aniline to link between an n-type Titanium (IV) oxide (TiO₂) core and p-type polyaniline emeraldine salt (PANI-ES) shell. Core-shell structure was created by functionalizing TiO₂ powders with silane aniline molecules using simple soaking technique and then polymerizing the attached aniline molecules using an oxidative technique. Infrared spectroscopy reveals the presence of Si-O bonds signifying the presence of linkage between the inorganic core and polymeric shell. Polymerization of the attached aniline molecules may have led to coupling of aromatic rings to form long polymeric structures which caused widening and shifting of aromatic rings’ IR peak to lower wavenumber. In conclusion, silane-aniline was successfully utilized to connect the n-type TiO₂ core and p-type PANI-ES shell.

Abstract: This work demonstrates the fabrication of Cu₂O thin film onto a fluorine-doped tin oxide (FTO) glass substrate via electrodeposition method which was conducted in a solution containing copper (II) acetate monohydrate and lactic acid. While varying the deposition time ranging up to 80 minutes, the solution was kept constant at solution temperature of 40°C, solution pH 6.5 and current density-0.3 mA/cm². The characteristics of electrodeposited Cu₂O were investigated via x-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), current-voltage (I-V) test and surface profiler. The XRD results showed the intensity peak of Cu₂O corresponded to reflection (111) increased when the deposition time increased. The topological characteristics from AFM characterization showed the increment of surface roughness decreased as the time increased from 5 to 60 minutes. However, the surface roughness decreased when the time reached 70 and 80 minutes. I-V characteristics of all electrodeposited Cu₂O showed Ohmic behaviours indicating the successful fabrication of n-Cu₂O thin film. From this study, the significant effect of deposition time of Cu₂O was clearly observed and plays an important role in providing mechanism growth of the film.

Abstract: A TiO2 coating when directly applied on copper plate showed an instantaneous ptype behavior, i.e. ennoblement of electrode potential on ultraviolet (UV) illumination though a copper plate when galvanically coupled to an ITO glass coated with TiO2 showed immediate lowering of electrode potential (‘n’-type effect) on illumination under deaerated conditions. The instantaneous p-type effect in the former case was attributed to the presence of a copper oxide layer present between the copper plate and the TiO2 coating. However, a prolonged exposure of the TiO2 coated copper plate showed an n-type effect under illumination after nearly 24 h, following which the electrode potential appeared stable and highly negative. This observation indicated that the photogenerated electrons in TiO2 are capable of reducing the copper oxide layer to ultimately realize the n-type effect of TiO2. The n-type effect could not be observed in aerated electrolyte solutions. The effect of different conditions in the ambience on the photoeffect of copper coated TiO2 will be discussed.