Papers by Keyword: Nano-Transistor

Abstract: Issues such as Tunneling, Leakage Currents and Light-Atom Penetration through the Film Are Threatening the Viability of Ultra-Thin Sio₂ as a Good Dielectric for Industrial and Electronic Devices and in Ceramic Technologies. in this Paper, the Effect of Zirconium-Doped Lanthanum Oxide Is Investigated in the Hope that this Material Can Be Used as a Good Gate Dielectric for the next Generation of CMOS (Complementary-Metal-Oxide-Semiconductor). Zirconium Lanthanum Oxide Nanocrystallites with General Formula of Zr_xla_1-xO_y Were Prepared by Using the Sol-Gel Method, such that the Zr Atomic Fractions in the Material Were in the Range of X = 5%, 20% and 50%. the Nanocrystallite’s Phases and Properties Were Characterized Using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) Techniques. Electrical Property Characterization Was Also Performed Using the Cyclic-Voltameter (C-V) Technique in TRIS Solution (pH = 7.3). C-V Measurements Show that Current through the TRIS Reduces at Higher Temperatures. Moreover, Elemental Qualitative Analysis Was Performed via Energy Dispersive X-Ray (EDX) Spectroscopy and Confirmed the above Claims.

Abstract: Starting from a three-dimensional transport model in the Landauer-Buttiker formalism we derive a scale-invariant expression for the drain current in a nano-transistor. Apart from dimensionless external parameters representing temperature, gate-, and drain voltage the normalized drain current depends on two dimensionless transistor parameters which are the characteristic length l and -width w of the electron channel. The latter quantities are the physical length and -width of the channel in units of the scaling length  = ~(2mF )􀀀1=2. Here F is the Fermi energy in the source contact and m is the eective mass in the electron channel. In the limit of wide transistors and low temperatures we evaluate the scale-invariant ID􀀀VD characteristics as a function of the characteristic length. In the strong barrier regime, i. e. for l & 20 long-channel behavior is found. At weaker barriers source-drain tunneling leads to increasingly signicant deviations from the long-channel behavior. We compare with experimental results.

Abstract: We develop a theory for scaling properties of quantum transport in nano-field effect transistors. Our starting point is a one-dimensional effective expression for the drain current in the Landauer-Büttiker formalism. Assuming a relatively simple total potential acting on the electrons the effective theory can be reduced to a scale-invariant form yielding a set of dimensionless control parameters. Among these control parameters are the characteristic length l and -width w of the electron channel which are its physical length and -width in units of the scaling length . Here is the Fermi energy in the source contact and is the effective mass in the electron channel. In the limit of wide transistors and low temperatures we evaluate the scale-invariant i-v characteristics as a function of the characteristic length. In the strong barrier regime, i. e. for long-channel behavior is found. At weaker barriers source-drain tunneling leads to increasingly significant deviations from the long-channel behavior.