Papers by Keyword: Nanosheet

Abstract: Carbon nitride (C₃N₄) has gained attention from scientists due to its potential applications as a catalyst for organic synthesis, electrodes, photocatalysts, and hydrogen storage materials. Using C₃N₄ as a photocatalyst for the glycerol-to-hydrogen reaction could offer many development advantages. Pure C₃N₄ has several shortcomings as a photocatalyst, so modifications are needed to enhance its properties and characteristics. Converting C₃N₄ into nanosheet form and adding Zirconium doping are solutions to improve its performance. The nanosheet form increases the surface area by creating thin sheet structures, while Zirconium doping is chosen because it can improve the conductivity and mechanical properties of the catalyst. This research focuses on characterizing catalysts with varying doping levels (5%, 10%, 15%, 20%, and 27%). Tests conducted include BET analysis, XRD, and UV-Vis DRS. Results show that the sample with 20% doping performs the best, with a specific surface area of 46.087 m²/g. Crystallinity was assessed with values of 2Ө = 27.8426°, 31.6712°, 45.4188°, and 56.4368°. The band gap energy was determined to be 3.067 eV. These findings are then compared with previous research.

Abstract: Titanate nanosheets are a type of 2-dimensional nanomaterial with vast applications in electronics, energy storage, and photocatalysis due to their superior properties, such as their large specific surface area and excellent electrical conductivity. Titanate nanosheets are expected to be the material precursor of TiO₂ nanostructures with further treatment. The current research aims to synthesize titanate nanosheets using the natural mineral ilmenite from Indonesia through the hydrothermal method. X-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Brunaeur-Emmett-Teller (BET) analysis were used to characterize the chemical composition, crystal structure, shape, size, and specific surface area of the prepared samples. The structure phase of the as-synthesized sample is known to be layered titanate. The as-synthesized nanosheet sample has a diameter ranging from 2.5 to 4 μm and BET surface areas of approximately 40 m²/g. This concise hydrothermal method could create 2-dimensional structured nanomaterials from Indonesian local minerals.

Abstract: Nanosheet-based transistor architectures for advanced CMOS have sophisticated 3D geometries and aggressively scaled dimensions imposing new challenges to wet etch and gas phase etch. In this paper, we describe three nanosheet-based transistor architectures (nanosheet, forksheet, and CFET) as well as associated challenges for wet etch and gas phase etch at various stages of the process flow, including channel release, work function metal patterning, and controlled dielectric etchback for stacked source-drain formation. The compatibility of etch processes with confined spaces and high-aspect-ratio structures becomes increasingly important for novel nanosheet-based transistor architectures.

Abstract: The selective etching of Si in multi-stacked Si and SiGe structures is a key process to fabricate the next-generation of FET, Gate-all-around FET. In this study, we investigated the mechanism of wet chemical etching process at the molecular level for two common ionic solutions, potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH). One of the important factors in the etching process is the reaction rate between the water and Si surface. Therefore, the water dynamics in i) bulk system and ii) Si wall confined system were mainly analyzed using molecular dynamics simulations. As a feature of bulk, TMAH showed the larger hydration structure around cation and the lower mobility of water in the hydration shell compared to KOH. In the Si wall confined system, the water and ion dynamics on the OH-terminated Si surface were distinctive. TMAH showed the lower mobility of water as in bulk system. Furthermore, the concentration and long stay of cation near the Si surface were observed in TMAH. This behavior of cation may directly prevent water from contacting surface. These characteristics of TMAH may slow down the Si etching process. However, if the blocking effect for etching depends on the surface composition, it will be useful for selective etching.

Abstract: Formulated chemical ACT^® SG6xxx series demonstrated SiGe etching selective to SiGe with lower Ge concentration. SiGe etching rate on SiGe/Si multi-stack shown steep trend as a function of Ge concentration, resulting in 338 of selectivity between SiGe30% and SiGe15%. Also, apparent loss on SiN and SiO₂ was not observed. Moreover, SiGe etch rate was not impacted by chemical flow in the beaker. It suggests reaction-controlled based etching, which leads to good within wafer uniformity in etching rate of 300mm wafer spin processing. In conclusion, ACT^® SG6xxx series is a promising option for the formation of BDI/MDIs in Nanosheet, Forksheet and CFET.

Abstract: Using two highly efficient inhibitors, one for silicon and one for SiO₂ and SiN it is possible by varying the hydrogenperoxide concentration to achieve tuneable formulated chemistry concerning selectivity. So, the same formulation can be used for the selective etching of SiGe25 vs. Si like for GAA applications as well as for the selective etching of SiGe40 vs. SiGe20 like for CFET applications.

Abstract: The Mo₆ cluster which has the great optical properties and chemical activity because of their unique electronic structure have been attracted attention in many fields such as phosphor and photocatalyst. However, the Mo₆ cluster it’s hard to recycling which limited its industry application because of its such small nanoscale. Immobilizing the Mo₆ cluster on 2-D material has a great value to challenge it. In this research, we study on the sulfurization process of Mo₆Br₁₂ cluster to investigate the more possibility of the immobilization of Mo₆ cluster.

Abstract: This paper addresses challenges and solutions of replacement metal gate of gate-all-around nanosheet devices. The unit process and integration solutions for the metal gate patterning as well as interface dipole patterning to offer multiple threshold voltage have been developed. The challenges of long channel device integration are also discussed.

Abstract: 3 formulated etchants were prepared and their etch rates were measured using blanket wafers in order to confirm that the etching reactions on Si_1-XGe_X and Si are controllable. Si_1-XGe_X selective etching with those formulations was also verified using the wafers which had Si_1-XGe_X and Si multi-stacked structures. Cross-sectional transmission electron microscope (TEM) images suggested that the formulations were usable for Si_1-XGe_X selective etching processes.

Abstract: The porous nanostructured hydroxyapatite (HA) has the high specific surface area and loading capacity that is useful for enhancing bioactivity, sinterability, densification, and the capacity for loading the drug, protein, heavy metals, etc. For the first time, the bipolar membrane in electrochemical method was developed for the synthesis of hydroxyapatite nanosheet-assembled porous structures. The bipolar membrane was installed in the electrolysis cell to separate the cell into two chambers. The bipolar membrane prevented the OH^- ions to move away from the cathode chamber and the H+ ions to go to the cathode chamber. In this condition, HA was formed in the cathode chamber while the other calcium phosphate was formed in the anode chamber. The pH increase of solution rapidly leads to more effective the formation of the nanostructured HA. The higher the electrolysis time and the current density the greater the tendency of nanostructured HA formation. The mechanism of HA hydroxyapatite nanosheet-assembled porous structures formation includes the agglomeration formation of the spherical-like particles, the formation of agglomeration nanosheet structures, and the formation of HA hydroxyapatite nanosheet-assembled porous structures.