Papers by Keyword: Nanotechnology

Abstract: The performance of the SiO₂ MOSFET-based absorber as a solution to arching within transmission lines (used for RF signal transportation) has been realized and analyzed at 28 GHz using the reflected signal from the R_X branch of 5G massive MIMO base station. The reflected signal from the receiver (R_X) branch of base stations may lead to interference, thus creating a performance reducing condition (arching) within the transmission lines. For optimum performance in the 5G regime, the SiO₂ MOSFET has been used to solve the problem of arching within the transmission line under large field intensities of a standing wave resulting from the impedance. The SiO₂ MOSFET-based absorber has been observed for a reflectivity of -79.5 dB and a rectification efficiency greater than 17 %

Abstract: The present state of nanotechnology in concrete is summarised in this study. The terms "nanotechnology," "nanoscience," and "nanoengineering" all have concrete definitions. Instrumentation and computational materials science advancements, as well as their practical applications, are reviewed in this article. nanoengineering and nanocomposites alteration of cement-based material was focus of this research, which examines current developments in this field.

Abstract: This paper presents system performance indices for a class-B power amplifier using Double-Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It also presents a comparative analysis of three power amplifiers using different switching devices, i.e. Bipolar Junction Transistor (BJT), MOSFET, and DG MOSFET. The MOSFET used in this research work is based on Silicon for n-MOSFET and SiO₂ has been used as oxide layer. These power amplifiers are also being designed and simulated to test the speed and time (taken for each of these power amplifiers) to get the output signal when an input signal is applied. A comparison of these three power amplifier circuits is taken in the tabular form to conclude which power amplifier circuit performs better regarding its switching speed and the time. Switching speed relates with the time taken to amplify the signal, which is the same as its time to amplify the signal to a specific gain. Settling time for these three types of power amplifiers have also been tested and presented for the performance of these power amplifiers.

Abstract: This research work designs a power amplifier with the use of Silicon-based Double-Gate (DG) MOSFET. It is a novel device used to amplify the input signal of an audio signal, etc. This research paper provides information on the problem identification in the existing models and its design objectives with its design constraints. It also reduces crossover distortion due to DG MOSFET instead of BJTs and MOSFETs in the class-B power amplifier. This is a low-power device for the mA range using SiO₂ as a dielectric material.

Abstract: The Indium Gallium Arsenide (InGaAs) based MOSFETs have been widely used in the research of high-speed devices with higher frequency. It has some application in the designing areas of power amplifiers. The InGaAs mainly have greater electron mobility and the lesser band gap in their compound makes them more suitable for developing high-speed devices. The Indium Gallium Arsenide compound-based MOSFETs are designed using the source/drain grown on a passive layer of Indium Phosphide substrate. This helps in reducing the power budget of the MOSFET and thereby reduces source and drain resistance. The re-grown layers over the bulk have serious issues such as parasitic capacitance and greater electrical field at the terminals of the gate along with the drain terminal. This results in a larger leakage current along with the terminals and thereby induces the degradation of the frequency of the application amplifiers. The high-ƙ dielectric along the gate terminal makes the device immune to leakage current for lesser frequency applications. The optimum material for the dielectric may be Hafnium (IV) Oxide – HfO₂ which has been used as a sidewall in the proposed InGaAs MOSFET design. The device simulation was carried out in a way to evaluate the characteristics of the proposed designs. The results were submissive to the conventional MOSFETs in terms of output capacitance over the source and drain terminals, leakage current in the drain terminal, and improved frequency parameters. The results also suggested that the sidewall design over the gate terminal constitutes the frequency improvement without losing the power and current characteristics.

Abstract: Coordinate technologies play an important role in many industrial applications, especially for eco nanobuildings and spaces. Lately, the global new architecture seems to be more automated as appeared in the parametric architecture, topological, animate, metamorphic, and isomorphic and per formative architecture. They all depend on the visualization, the high precision techniques, and the 4th dimension all within sustainability. But till now, there is no main environmental space code, unit or standards to deal with to insure that the environmental design became in a form of an easier one to be the design of the era as all the global calls aware us to preserve the nature from pollution. Mainly within the call for the nanotechnology, if there is found a least architectural volumetric unit which can fulfill all the environmental sustainable systems within the visionary and the 4th dimensional acts, then we can act with the environment with easier spaces that can be duplicated in a uniform way, to work easily for measure and estimate the budget of his supposed built space. Therefore, the main liable issue concerns the research for the least architectural volumetric unit, and we can call it the nanoarchitectural unit. As nanoarchitecture is a virtual and proposed kind of architecture, which the architects aim to create it or follow it the nanotechnology to insure that the 3D technology is to submit as an application in all branches of science, to achieve a dream of the present-day from sustainability and environment for future generations. Accordingly, recent studies have confirmed that 3D coordinate technology using digital printing has an important subtle impact on industry, especially for green buildings and spaces.

Abstract: The channel material of a gate describes the operating condition of the MOSFET. A suitable operating condition prevails in MOSFETs if the transistors are quite enough to observe and control at the nanometer regime. An efficient gate and channel material have been proposed in this work which is based on the electrical properties they exhibit at the temperature of 300 K. The doping concentration for the electrons and holes is maintained to be 1Χ10¹⁹cm^-3 for the entire electronic simulator. The simulation results show that using La₂O₃ along with Indium Nitride (InN) material for the designing of Double-Gate (DG) MOSFETs provides better controllability over the transistor at a channel length of 50 nm. This proposed DG-MOSFET is more compliant than the conventional coplanar MOSFETs based on Silicon.

Abstract: This paper explores how the application of nanotechnology can enhance the efficacy of construction materials, decrease consumption and cost of materials, whilst further increasing sustainability in the South African construction industry. Nanotechnology controls matter at an atomic level. At this level the properties of matter are manipulated and severely affected with potentially significant benefits to the construction industry. This exploratory desktop study examined relevant scientific literature through thematic content analysis and the uses of NanoSilica, Carbon Nanotubes, Titanium Dioxide, Zinc Oxide, Nanosilver, and Copper Nanoparticles were extracted and discussed.

Abstract: In this study, therefore, multi-walled carbon nanotubes (MWCNTs) were prepared on account of morphology, particle size and thermal properties of CNTs from high-density polyethylene (HDPE) waste and polypropylene (PP) using pyrolysis in the presence of Fe/Mn/Al catalyst. A comparison between the produced CNTs and commercially available CNTs was conducted to analyse if any deviations exist between both products. It was discovered that The commercial CNTs properties have similarities with the MWCNTs produced from plastic wastes. These materials were found to differ in purity with 1% error. The structures and morphologies of these materials are comparable as they were found to be crystalline and they revealed lattice fringes. They differ by the planes in the structural orientation. The MWCNTs synthesized from plastic wastes showed low thermal stability as opposed to the commercial CNTs.

Abstract: Heat resistant coatings are considered for the external surface Low-Pressure Steam Turbines (LPST). 410 stainless steel covered with nano heat resistant coatings consists of a heat resistant connecting layer enhanced by nanoparticles. A commercial paint was modified by using 20%wt of (titanium dioxide (TiO₂) - aluminum oxide (Al₂O₃)) with different concentrations range (25,50,75wt% of TiO₂) layers. These nano-coatings paints were airbrushed onto the surface of specimens of steam turbine blades. The test rig and experimental apparatus have been fabricated and collected to accomplish the thermal tests. The samples were subjected to heat resistance and a temperature test approximately similar to the steam turbine's operation condition temperature. The test results are used to choose the nano-coating layer with a concentration that ensures a composition's highest protective properties. The test sample with concentration (paint-(75% Al₂O₃+25% TiO₂)) showed the highest thermal properties compares with the other cases.