Papers by Keyword: NiPt

Abstract: During silicide formation, unreacted NiPt metals is traditionally removed either by aqua regia (ESH concern) or SPM. This latter can easily degrade the device yield in HKMG (High K Metal Gate) nodes if the metal gates (usually TiN based) aren’t perfectly encapsulated. First some new characterizations are presented to better understand the NiPt metal alloy removal, then a new solution is given to be able to remove this alloy without degrading HKMG materials.

Abstract: The L10 ordered MPt(001) thin films (M = Fe or Co) are very interesting for perpendicular recording due to their magnetic anisotropy and magneto-optical behaviours. Epitaxial L10-ordered NiPt(001) / FePt(001) bi-layers were co-deposited on MgO(100) substrates by MBE. The L10 order parameter is high with the concentration modulation along the growth direction. Some FeNiPt2(001) thin films were obtained by interdiffusion of the bilayers. The long-range-order parameter is conserved after interdiffusion (S = 0.75 ± 0.06), which can be explained by different mechanisms: a second-neighbour jump, a six-jump cycle, an anti-structural bridge mechanism or an antisite-pair elimination and creation mechanism, a double vacancy or a triple defect diffusion mechanism. Quenched molecular dynamics calculations in the frame of the second moment approximation of the tight binding method have been performed to obtain the energetic paths of the different mechanisms. The secondneighbour vacancy jump, the simultaneous jumps of bivacancies and the triple defect mechanisms can be ruled out for energetic reasons.