Papers by Keyword: Normally-On JFET

Abstract: This work investigates the short-circuit capability of SiC cascode by performing two-dimensional electro-thermal TCAD simulations. The effects of the threshold voltage of the SiC JFET on the cascode short-circuit withstand time are studied. A design trade-off between the JFET specific-on resistance and the cascode short-circuit withstand time is determined. The experimental results are also presented.

Abstract: This paper describes a simple fault protection system for Current Source Inverter built with normally-on SiC JFETs. Because all transistors are in on-state after loss of the gate drive(s) supply, list of possible fault modes is extended in reference to standard inverters. That is also why an additional normally off switch is introduced in the DC link. Operation principles of the protection system which follows the drain-source voltages of JFETs and the current of the DC link are presented. The 2kVA/100kHz model of the inverter equipped with the proposed system is validated via various laboratory tests including short-circuits and the auxiliary supply turn off.

Abstract: A 1200 V SiC JFET has been demonstrated to achieve ultra-low switching losses ten times lower than for industrial grade 1200V Si IGBT. The low switching losses are also shown to compete with the fastest 600V class MOSFET in the market, yielding 1.1% higher PFC stage efficiency for 340 kHz switching frequency, when same device on-resistances were measured. The proposed normally-on JFET also differentiates over the IGBT by its purely Ohmic output characteristics without any voltage threshold, and by a monolithically integrated body diode with practically zero reverse recovery. In this paper we outline as well how the other pre-requisites for a 1200 V SiC switch in applications such as photovoltaic systems and UPS can be fulfilled by the proposed JFET solution: long-term reliability, product cost optimization by low specific on-resistance combined with reasonable process window expectations. Finally, a normally-off like safe operation behavior is ensured by a dedicated driving scheme utilizing a low-voltage Si MOSFET as protection device at system start-up and for system failure conditions.