Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD

Authors: Shigehiro Nishino, Yasuichi Masuda, Satoru Ohshima, Chacko Jacob

Growth Induced Stacking Fault Formation in 4H-SiC

Authors: D. Siche, M. Albrecht, H. J. Rost, Andreas Sendzik

SiC Single Crystal Growth on Dual Seed with Different Surface Properties

Authors: Sang Il Lee, Jung Young Jung, Mi Seon Park, Hee Tae Lee, Doe Hyung Lee, Won Jae Lee, Soon Ku Hong, Im Gyu Yeo, Heung Rak Kim, Myong Chuel Chun

Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si₂Cl₆+C₃H₈ System

Authors: Yasuichi Masuda, Satoru Ohshima, Chacko Jacob, Shigehiro Nishino

Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV

Authors: Christian Hecht, Bernd Thomas, Wolfgang Bartsch