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Articles by keyword: «Ohmic Contact»

• A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures
  Published in: Silicon Carbide and Related Materials - 1999 (p1001)
• A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400°C in Air
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p795)
• A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation
  Published in: Silicon Carbide and Related Materials - 1999 (p1025)
• Adhesion and Microstructure of Ni Contacts to 3C-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p993)
• Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data
  Published in: Silicon Carbide and Related Materials - 2002 (p673)
• Al-Free Nanolayered Metallization Systems for Sub-Micron HEMTs
  Published in: Journal of Nano Research Vol. 17 (p203)
• Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride
  Published in: Silicon Carbide and Related Materials 2010 (p812)
• Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p581)
• An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts
  Published in: Silicon Carbide and Related Materials 2005 (p859)
• Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2007 (p635)
• Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications
  Published in: Silicon Carbide and Related Materials 2009 (p745)
• Characteristics of Ni-Based Bi-Layer Contacts on GaN
  Published in: Cross-Disciplinary Applied Research in Materials Science and Technology (p525)
• Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies
  Published in: Silicon Carbide and Related Materials 2005 (p891)
• CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p885)
• Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
  Published in: Silicon Carbide and Related Materials - 2002 (p661)