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Articles by keyword: «Ostwald Ripening»

• A Comparative Study on Process-Properties Correlation of Nano Radar Absorbing Heat Treated Materials
  Published in: Nanomaterials and Devices: Processing and Applications (p39)
• A Theoretical Model for Digestive Ripening
  Published in: PRICM 6 (p2279)
• Anisotropic Ostwald Ripening in Silicon Nitride: On the Reaction-Controlled Kinetics
  Published in: THERMEC 2009 (p2598)
• Behavior of Boron in 9Cr Heat Resistant Steel during Heat Treatment and Creep Deformation
  Published in: The Mechanical Behavior of Materials X (p569)
• Boron Diffusion in Pre-Amorphised Silicon: Interactions with the End of Range Defects
  Published in: Diffusion in Silicon (p11)
• Characteristics of Al Foam with High Porosity by Melt Foaming Method
  Published in: Advances in Nanomaterials and Processing (p1801)
• Comparative Study of Cases for the Ostwald Ripening with Iteration Function Systems
  Published in: Advanced Powder Technology II (p186)
• Composition Fluctuations in the Ostwald Ripening
  Published in: Diffusion and Diffusional Phase Transformations in Alloys (p187)
• Compositional Gradients at the Phase-Boundary between the γ' -Precipitates and the γ' - Matrix in the γ' - Hardened Nickel-Base Superalloy Nimonic 105
  Published in: Intergranular and Interphase Boundaries in Materials (p635)
• Computer Simulation of C-N-V Precipitates Evolution Based on Local Concentration Fluctuations
  Published in: Microalloying for New Steel Processes and Applications (p719)
• Creep Resistance and Structural Stability of Low-Alloy CrMo and CrMoV Steels
  Published in: Creep and Fracture of Engineering Materials and Structures (p419)
• Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p377)
• Development of Radar Absorbing Nano Crystals under Thermal Irradiation
  Published in: Journal of Nano Research Vol. 2 (p91)
• Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p357)
• Doping of Silicon Carbide by Ion Implantation
  Published in: Silicon Carbide and Related Materials 2000 (p549)