Authors: Judith Woerle, Manuel Belanche Guadas, Marco Negri, Christopher Lamontagne, Filippo Bonafe, Roberta Nipoti, Ulrike Grossner
Abstract: In this work, we study the impact of the dose rate on the electrical properties of aluminum (p-body, p+-body-contact) and phosphorous (n-source/drain) implanted 4H-SiC. We find no significant differences for dose rates ranging from 1×1011 cm-2s-1 to 2−7×1012 cm-2s-1. AFM scans across implanted and non-implanted regions after thermal oxidation and subsequent oxide etching reveal a clear dependence of the oxidation rate on the conduction type and doping concentration. In addition, we observe an increasing (decreasing) oxidation rate for increasing doping concentrations of the n-type (p-type) ion implanted areas.
263
Authors: Judith Woerle, Vito Šimonka, Elisabeth Müller, Andreas Hössinger, Hans Sigg, Siegfried Selberherr, Josef Weinbub, Massimo Camarda, Ulrike Grossner
Abstract: Step-controlled growth of 4H-SiC epitaxial layers leads to the formation of a step-bunched morphology along the surface with larger macrosteps, composed of smaller microsteps of several Si-C bilayer heights. As thermal oxidation is an orientation-dependent process, a multi-faceted surface is expected to exhibit a different oxidation behavior compared to a perfectly planar surface. In this work, step-bunched surfaces after oxidation are investigated by high-resolution atomic force microscopy (HR-AFM) and transmission electron microscopy (TEM) indicating a morphological change in the early stages of thermal oxidation. An orientation-dependent oxidation model is used to correctly describe variations of the oxide thicknesses at isolated macrosteps.
180
Authors: Jin Seok Lee, Bo Yun Jang, Joon Su Kim, Young Soo Ahn, Gi Hwan Kang, Jei Pil Wang
Abstract: The oxidation behavior of photovoltaic ribbon was measured for 48 hours over the temperature range of 300°C to 800°C using thermogravimetric apparatus (TGA). It was found that weigh-gained of both samples was found to be increased with increasing temperature and it was dramatically increased at 800°C for 30 minutes of initial oxidation time. Pure copper with 99.55% purity was successfully recovered from the photovoltaic ribbon of spent solar module using cyclic oxidation method.
71
Authors: Jin Seok Lee, Bo Yun Jang, Joon Soo Kim, Young Soo Ahn, Gi Hwan Kang, Jei Pil Wang
Abstract: The oxidation rate of pure copper was measured for 48 hours over the temperature range of 500°C to 700°C using thermogravimetric apparatus by means of continuous and discontinuous oxidation methods. It was found that weigh-gained of both samples was found to be increased with increasing temperature and rate laws were determined to be parabolic and linear rate law each other. The comparison of oxidation rate of copper was shown to be higher in discontinuous that in continuous process due to direct oxidation through the oxide scale and copper substrate.
494
Authors: Rui Zhang, Yi Wan, Xing Ai, Zhan Qiang Liu
Abstract: The oxide film on implant surface of biomedical titanium alloy is crucial to its bioactivity and biocompatibility in human body. A new method is proposed to obtain titanium oxide film by cutting process in oxygen-enriched atmosphere. A gas mixing system is firstly developed to provide oxygen-argon mixed gas to the flank face of insert during turning. The results show that oxygen-enriched atmosphere promote the oxidation reaction of titanium element. Thicker oxide film can be obtained in oxygen-enriched condition than that in natural atmosphere. The corrosion resistance is also improved significantly by this method in electrochemical test.
37
Authors: Mitsuo Okamoto, Youichi Makifuchi, Tsuyoshi Araoka, Masaki Miyazato, Yoshiyuki Sugahara, Takashi Tsutsumi, Yasuhiko Onishi, Hiroshi Kimura, Shinsuke Harada, Kenji Fukuda, Akihiro Otsuki, Hajime Okumura
Abstract: 4H-SiC(000-1) C-face was oxidized in H2O and H2 mixture gas (H2 rich wet ambient) for the first time. H2 rich wet ambient was formed by the catalytic water vapor generator (WVG) system, where the catalytic action instantaneously enhances the reactivity between H2 and O2 to produce H2O. The dependence of SiC oxidation rate on the H2O partial pressure was investigated. We fabricated 4H-SiC C-face MOS capacitor and MOSFET by the H2 rich wet re-oxidation following the dry O2 oxidation. The density of interface traps was reduced and the channel mobility was improved in comparison with the conventional O2 rich wet oxidation.
975
Authors: Bin Xu, Hong Xi Zhu, Nai Peng, Cheng Ji Deng, Wen Jie Yuan
Abstract: The oxidation behaviors and kinetics of in-situ β-Sialon bonded Al2O3-C refractories were investigated by TGA techniques via isothermal oxidation experiments at different temperatures. The results show that the oxidation process of in-situ β-Sialon bonded Al2O3-C refractories can be divided into three stages: oxidation reaction rate controlling stage, reaction and diffusion controlling stage, and diffusion controlling stage. The oxidation rate controlled by the reaction rate has no obvious changes as the temperature increases. The oxidation rate controlled by the reaction rate and the diffusion rate together has a trend of decline, so is the oxidation rate controlled by the diffusion rate.
1021
Authors: Jin Guo Dai, Qian Wu Song, Qi Wu
Abstract: The effect of different mass transfer ways in landfill leachate treatment by electrochemical oxidation was studied, the electrochemical oxidation rate, current efficiency and energy consumption were mainly discussed by four different mass transfer ways—including higher pressure water jet electrode, aeration, mixing and natural convection. The results show that mass transfer way has an important influence for NH4+-N and CODcr removal in electrochemical oxidation landfill leachate, high pressure water jet has high current efficiency, oxidation rate and lower energy consumption, which is 7.41 mg/L.min, 48% and 0.11 Kwh/gNH4+-N in electrolytic 6 hours, respectively. Different mass transfer ways have different mass transfer coefficient, improving mass transfer coefficient could increase transfer rate and the overall efficiency of system.
60
Authors: Guang Yang Fu, Xiao Peng Tang, Qun Liu, Yong Su, Ning Ning Yang
Abstract: By means of magnetron sputtering, the Fe-Y coatings containing 15.4%, 20.7% and 32.7% Y (atom fraction), were deposited on stainless steels. The sputtered coatings were investigated by discontinuous weigh measurement. The results indicate that the oxidation kinetics can be divided into three stages, of which the first and second stages obey the parabolic rate law, while the oxidation kinetic curves of the last stage nearly exhibits horizontal lines. With the increase of the content of Y, the oxidation rate obviously increases. The external scale of the three kinds of alloys is substantially similar. After 24-h oxidation at 800 °C under 1 atm of air, the surface of sputtered coating is mainly transformed into three types of oxide scales, of which the thin outermost layer was Fe2O3, the innermost is YFeO3 mixed with double oxides including FeO or Fe3O4. Single Y2O3 layer was not formed on the surface or in the alloys. The results were disscussed by taking into account the defects in the metal oxide, the self-diffusion of the elements in the alloys, and the low diffusion of yttrium in iron.
1052
Authors: W.Joe Quadakkers, P. Huczkowski, D. Naumenko, J. Zurek, Gerald H. Meier, L. Niewolak, Lorenz Singheiser
Abstract: For a number of chromia and alumina forming high temperature alloys and coatings,
recent studies revealed, that in some cases the specimen/component or coating thickness may
substantially affect the growth rates of the surface oxides. For the alumina formers the thickness
dependence is mainly governed by depletion of oxygen active elements such as Y, Zr, Hf, Mg
which are either intentionally added alloying elements or manufacturing related alloy impurities. In
the case of the chromia forming materials, which tend to exhibit a more substantial dependence of
oxidation rate on specimen/component thickness, depletion of minor alloying additions is also an
important factor to be considered. However, for these alloys relaxation of oxide growth stresses by
plastic deformation of the metallic substrates seems to be the dominant parameter which governs
the observed behaviour.
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