Papers by Keyword: Oxide Removal

Abstract: Advanced technology node demands new capabilities in pre-cleaning substrates of epitaxy films. In particular, cleaning carbon and native oxide on Si and SiGe surfaces are required. In this paper, we present an approach to cleaning both carbon and Si/SiGe native oxide using Previum chamber with two distinct chemistries. FTIR and SEM are used to characterize the conversion and sublimation steps of cleaning native oxide, and carbon film etch rate by hydrogen radicals is presented. The carbon cleaning and oxide cleaning capabilities are integrated in Previum chamber and significantly improved cleaning results are supported by SIMS.

Abstract: Compound semiconductors based on group III and V elements of the periodic system have high charge carrier mobility and are, therefore, candidates for channel material in future CMOS devices [1]. In order to design wet chemical solutions that lead to appropriate surface pre-conditioning and allow for nanoscale processing and minimal substrate loss, a thorough understanding of the interactions between the substrate and the chemical solutions is needed and the basic etching mechanisms needs to be resolved. The focus of this research is on InP in acidic solutions. ESH aspects are also considered.

Abstract: The formation of self-assembled monolayers (SAMs) by specific organic molecules with appropriate anchor groups on semiconductor surfaces may be used to probe the chemical state and quality of the surface or to achieve surface passivation. Molecules with thiol anchor groups are able to bond to hydrogen-terminated germanium surfaces (Ge-S bond). We have prepared SAMs of alkylthiols with different head groups on germanium. Since the surface preparation of germanium is neither well understood nor developed, the controlled preparation of an oxide-free completely H-terminated surface which is a prerequisite for SAM formation of alkylthiols turned out to be a major challenge. Several approaches have been studied. The characterization of the germanium surface prior to and after SAMs formation has been performed by AFM, XPS, Synchrotron-TXRF and -NEXAFS.