HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «PL»

• A Study of the D_II Defect after Electron Irradiation and Annealing of 4H SiC
  Published in: Silicon Carbide and Related Materials 2006 (p319)
• Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals
  Published in: Silicon Carbide and Related Materials 2003 (p75)
• An Optical Zeeman Study on Fe³⁺ in GaAs and InP
  Published in: Defects in Semiconductors 17 (p797)
• Annealing Study on Radiation-Induced Defects in 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p517)
• Characterization and PL Properties of Ge-Induced Crystallization of a-Si Films Deposited by Magnetron Sputtering
  Published in: Advanced Research on Material Engineering, Architectural Engineering and Informatization (p99)
• Control of Defects in GaAs/GaInP Interface Grown by MOVPE
  Published in: Defects in Semiconductors 18 (p539)
• Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering
  Published in: High-Performance Ceramics IV (p567)
• Defect Related Recombination Processes in II-VI Quantum Wells
  Published in: Defects in Semiconductors 18 (p455)
• Dislocation Related PL of Multi-Step Annealed Cz-Si Samples
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p773)
• Electrical and Optical Characterization of Defects in GaN Generated by Ion Implantation
  Published in: Defects in Semiconductors 19 (p1093)
• Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2003 (p1503)
• Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p211)
• Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics
  Published in: Silicon Carbide and Related Materials 2010 (p173)
• Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers
  Published in: Silicon Carbide and Related Materials - 2002 (p189)
• Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p767)