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Articles by keyword: «PVT»

• 100 mm 4HN-SiC Wafers with Zero Micropipe Density
  Published in: Silicon Carbide and Related Materials 2007 (p7)
• A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
  Published in: Silicon Carbide and Related Materials 2004 (p21)
• A Study of Nitrogen Incorporation in PVT Growth of n⁺ 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p59)
• An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2006 (p9)
• Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals
  Published in: Silicon Carbide and Related Materials 2007 (p31)
• Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
  Published in: Silicon Carbide and Related Materials 2008 (p19)
• Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2003 (p91)
• Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
  Published in: Silicon Carbide and Related Materials 2003 (p135)
• Defect Status in SiC Manufacturing
  Published in: Silicon Carbide and Related Materials 2008 (p3)
• Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
  Published in: Silicon Carbide and Related Materials 2003 (p35)
• Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
  Published in: Silicon Carbide and Related Materials 2011 (p29)
• Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates
  Published in: Silicon Carbide and Related Materials 2006 (p1031)
• Experimental Verification of a Novel System for the Growth of SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2010 (p16)
• Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p67)
• Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport
  Published in: Silicon Carbide and Related Materials 2001 (p35)