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Articles by keyword: «Passivation»

• Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition
  Published in: Silicon Carbide and Related Materials 2010 (p441)
• Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique
  Published in: Silicon Carbide and Related Materials 2004 (p701)
• Characterization of Ni Nanopowders Produced by Electrical Explosion of Wire Technique
  Published in: Eco-Materials Processing & Design VII (p710)
• Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p717)
• Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis
  Published in: Silicon Carbide and Related Materials 2004 (p589)
• Comparative Research on Properties of Trivalent and Hexavalent Passive Film on Galvanized Steel
  Published in: Advances in Chemical Engineering (p1760)
• Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications
  Published in: Silicon Carbide and Related Materials 2010 (p449)
• Corrosion Behavior of Porous Ti-24Nb-4Zr Alloy in Different Simulated Body Fluids
  Published in: New Materials, Applications and Processes (p1577)
• Corrosion Behaviour of Fe_(73.5-X)Cu₁Nb₃Si_13.5B₉Mo_X(1-5) Amorphous Alloys
  Published in: Electrochemical Methods in Corrosion Research VI (p1041)
• Corrosion of High Temperature Alloys by Molten Glass
  Published in: High Temperature Corrosion and Protection of Materials 5 (p865)
• Corrosion of Nickel-Chromium Alloys by Molton Glass at 1100°C: An Electrochemical Study
  Published in: High Temperature Corrosion and Protection of Materials 4 (p709)
• Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
  Published in: Defects and Diffusion in Ceramics (p1)
• Defect Engineering in Polycrystalline Silicon Using Ultrasound
  Published in: Polycrystalline Semiconductors V (p485)
• Dependence of Thermal-Cycling-Induced Deformation on Passivation Morphology in Plastic-Encapsulated Microelectronic Devices
  Published in: Advances in Nanomaterials and Processing (p1)
• Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
  Published in: Silicon Carbide and Related Materials 2001 (p1161)