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Articles by keyword: «Passivation»

• Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si
  Published in: Diffusion in Materials DIMAT2000 (p597)
• Disorder and Structural Relaxation in Passive Films on Fe-Cr Alloys
  Published in: Passivation of Metals and Semiconductors (p233)
• Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p427)
• Dissolution and Passivation of Stainless Steels Eposed to Hydrochloric Acid
  Published in: Passivation of Metals and Semiconductors (p347)
• Effect of Hydrogen Passivation on Lightly n-Doped GaAs
  Published in: Shallow Impurities in Semiconductors V (p429)
• Effect of LaCoO₃ Additive on the Electrochemical Behavior of Zinc Anode in Alkaline Solution
  Published in: Optoelectronic Materials (p596)
• Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
  Published in: Silicon Carbide and Related Materials 2003 (p1177)
• Effect of Passivation on Pitting Corrosion of 316L Stainless Steel in Concentrated Seawater
  Published in: Advanced Manufacturing Technology (p127)
• Effect of pH on Electrochemical Behaviour and Passive Film Composition of Stainless Steels
  Published in: Electrochemical Methods in Corrosion Research V (p225)
• Effect of Structure on the Electrochemical Oxidation Rate of Copper and Nickel Sulfides
  Published in: Diffusion in Solids and Liquids VII (p383)
• Effect of Time, Temperature, and Solution Composition on the Passivation of 316L Stainless Steel for Biomedical Applications
  Published in: THERMEC'2003 (p3017)
• Effects of Anions on Corrosion Behavior of Ni-Cu-P Coatings
  Published in: Advances in Superalloys (p1375)
• Effects of Grain Boundary Structure and Chemistry on Electrical Activity in Polycrystalline Silicon
  Published in: Polycrystalline Semiconductors VII (p333)
• Electrical Activity of Structural Defects in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p273)
• Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion
  Published in: Silicon Carbide and Related Materials 2004 (p551)