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Articles by keyword: «Phosphorus»

• A Study on Ammonia Nitrogen, Phosphorus and Organic Pollutants Removal of Zeolites by Salt Modification
  Published in: Manufacturing Science and Technology (p947)
• Ab-Initio Study of Dopant Interstitials in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p523)
• Adsorption Removal of Phosphorus from Aqueous Solution by the Activated Carbon Prepared from Sugarcane Bagasse
  Published in: Environmental Biotechnology and Materials Engineering (p1046)
• Affect of Assimilable Organic Carbon (AOC) and Phosphorus to Heterotrophic Microbial Growth in Drinking Water Distribution System
  Published in: Manufacturing Science and Technology (p4031)
• Analysis on Mass Balance and Optimization of Operating Performance in Anaerobic-Anoxic-Aerobic Oxidation Ditch Process
  Published in: Advances in Civil Engineering and Architecture (p4864)
• Anomalous Diffusion of Phosphorus in Silicon by Pair Diffusion Model and Decrease in Quasi Vacancy Formation Energy
  Published in: Defects in Semiconductors 18 (p1595)
• Atom Redistribution during co-Doped Amorphous Silicon Crystallization
  Published in: Diffusion in Materials - DIMAT2008 (p329)
• Boron and Phosphorus Segregation Behavior at Grain Boundary in a Ti-If Steel after Annealing
  Published in: New Materials and Advanced Materials (p320)
• Codoping of 4H-SiC with N- and P-Donors by Ion Implantation
  Published in: Silicon Carbide and Related Materials 2001 (p791)
• Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
  Published in: Silicon Carbide and Related Materials - 1999 (p1331)
• Cooling Induced Non-Equilibrium Segregation of Impurity Concentration of Phosphorus and Tin to Grain Boundaries in an Iron-3% Nickel Alloy
  Published in: Intergranular and Interphase Boundaries in Materials (p201)
• Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p493)
• Defects Below Mask Edges in Silicon Induced by Amorphizing Implantations
  Published in: Defect and Diffusion Forum Vols. 148-149 (p103)
• Development of Permeable Reactive Barrier for Phosphorus Removal
  Published in: Advanced Materials Forum V (p1365)
• Diffusion of Silicon and Phosphorus into Germanium as Studied by Secondary Ion Mass Spectrometry
  Published in: Diffusion in Materials DIMAT 1996 (p1053)