| Paper Title | Page |
|---|---|
|
Authors: V. Dixit, H.F. Liu, N. Xiang |
209 |
|
Authors: Chang Fa Li, Ji Guang Li |
309 |
|
1D Properties of Straight Dislocation Segments in Si and Ge Authors: E.A. Steinman |
537 |
|
3C-SiC Heteroepitaxy on Hexagonal SiC Substrates Authors: Anne Henry, Xun Li, Henrik Jacobson, Sven Andersson, Alexandre Boulle, Didier Chaussende, Erik Janzén |
257 |
|
4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS) Authors: Takashi Aigo, Wataru Ito, Hiroshi Tsuge, Hirokatsu Yashiro, Masakazu Katsuno, Tatsuo Fujimoto, Wataru Ohashi |
101 |
|
4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering Authors: Qiang Xu, Hua Yang Sun, Cheng Chen, Ling Yun Jang, E. Rusli, Suwan P. Mendis, Chin Che Tin, Zhi Ren Qiu, Zheng Yun Wu, Chee Wee Liu, Zhe Chuan Feng |
509 |
|
8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well? Authors: Teddy Robert, Sandrine Juillaguet, Maya Marinova, Thierry Chassagne, Ioannis Tsiaousis, N. Frangis, Efstathios K. Polychroniadis, Jean Camassel |
339 |
|
Authors: W. Sullivan, John W. Steeds, Hans Jürgen von Bardeleben, J.L. Cantin |
477 |
|
A Facile Method for Fabrication Zinc Oxide Nanoparticles with Green-Photoluminescence Authors: Zhi Bing Xu, Yi Wang |
769 |
|
A First-Principles Study of Mg-Related Defects in GaN Authors: K.J. Chang, Sun Ghil Lee |
1137 |