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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
PiN Diode
»
74 papers on 5 pages:
1
[2]
[3]
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[5]
[next]
1.2 kV Pin Diodes with SiCrystal Epiwafer
Published in:
Silicon Carbide and Related Materials 2006
(p901)
11.72 cm
2
SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode
Published in:
Silicon Carbide and Related Materials 2011
(p961)
4,308V, 20.9 mΩ-cm
2
4H-SiC MPS Diodes Based on a 30μm Drift Layer
Published in:
Silicon Carbide and Related Materials 2003
(p1109)
8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
Published in:
Silicon Carbide and Related Materials 2004
(p969)
Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
Published in:
Silicon Carbide and Related Materials 2007
(p95)
An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA
Published in:
Silicon Carbide and Related Materials 2010
(p531)
An Investigation of Material Limit Characteristics of SiC IGBTs
Published in:
Silicon Carbide and Related Materials 2011
(p1143)
Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation
Published in:
Silicon Carbide and Related Materials 2006
(p905)
Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
Published in:
Silicon Carbide and Related Materials 2007
(p995)
Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects
Published in:
Silicon Carbide and Related Materials 2006
(p889)
Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
Published in:
Silicon Carbide and Related Materials 2004
(p437)
Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 °C
Published in:
Silicon Carbide and Related Materials 2011
(p957)
Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes
Published in:
Silicon Carbide and Related Materials 2005
(p363)
Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
Published in:
Silicon Carbide and Related Materials 2006
(p909)
Current Transport Mechanisms in 4H-SiC PiN Diodes
Published in:
Silicon Carbide and Related Materials 2003
(p1017)
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