| Paper Title | Page |
|---|---|
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A Material Removal Modeling of Chemical Mechanical Polishing Based on Micro-Contact Mechanism Authors: Shi Wen Du, Yong Tang Li, Jian Jun Song, Hui Ping Qi |
472 |
|
A Study on the Characteristics of Micro Electropolishing for Stainless Steel Authors: Sung Hyun Kim, Sang Gyun Lee, Seung Geon Choi, Eun Sang Lee, Seung Bok Choi, Chul Hee Lee |
474 |
|
Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching Authors: Takeshi Okamoto, Yasuhisa Sano, Kazuma Tachibana, Kenta Arima, Azusa N. Hattori, Keita Yagi, Junji Murata, Shun Sadakuni, Kazuto Yamauchi |
493 |
|
Approach of Realizing Material Removal at Nanometer Level in Ultraprecision Polishing Authors: X. Shen, M. Chang, Ju Long Yuan, Ping Zhao, Wen Hong Zhao, L.B. Zhang |
466 |
|
Damage-Free Planarization of 2-Inch 4H-SiC Wafer Using Pt Catalyst Plate and HF Solution Authors: Takeshi Okamoto, Yasuhisa Sano, Hideyuki Hara, Kenta Arima, Keita Yagi, Junji Murata, Hidekazu Mimura, Kazuto Yamauchi |
835 |
|
Authors: Satoshi Takei |
3197 |
|
Effect of Pre-Thin-Surface Grinding on Copper Chemical Mechanical Polishing Authors: Junji Watanabe, Tohru Hisamatsu, M. Hirano |
407 |
|
Effects of Electrolyte Formulas on Electrochemical Polish Planarization of Pure Copper Authors: J.C. Huang, Yung Jin Weng, Yung Chun Weng, Y.F. Chan, Hsu Kang Liu, H.S. Fang |
159 |
|
Electro-Chemical Mechanical Deposition for Planarization of Cu Interconnect Authors: Suk Hoon Jeong, Heon Deok Seo, Boum Young Park, Jae Hong Park, Sung Min Park, Sang Chul Kim, Kee Ho Kim, Hae Do Jeong |
389 |
|
Essential Aspects of Chemical Mechanical Planarization for Oxide Semiconductor Authors: Hong Ho Cheng, H.Y. Tsai, Yue Long Huang |
1 |