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Articles by keyword: «Poly-Silicon»

• A Monolithic MEMS Accelerometer Process
  Published in: MEMS/NEMS Nano Technology (p70)
• A New Approach to Grain Boundary Engineering for Photovoltaic Polysilicon by Unidirectional and Rotational Solidification
  Published in: Recrystallization and Grain Growth III (p843)
• Addressing of Organic Electroluminescent Displays
  Published in: Polycrystalline Semiconductors VI (p385)
• Analysis of Tunneling Piezoresistive Effect of P-Type Polysilicon Nanofilms
  Published in: Micro and Nano Technology (p89)
• Characterization of Defects at the Si/SiO₂ Interface of a Polysilicon Gated MOS System by Monoenergetic Positrons
  Published in: Positron Annihilation - ICPA-11 (p718)
• Charge Storage Characteristics of Si-Rich Silicon Nitride and the Effect of Tunneling Thickness on Nonvolatile Memory Performance
  Published in: Liquid Crystals and Related Materials II (p307)
• Correlation between the Ageing and the Grain Size of Polysilicon Thin-Film Transistors
  Published in: Polycrystalline Semiconductors VI (p343)
• Design and Simulation of a Micromachined CMOS Temperature Sensor
  Published in: Micro and Nano Technology (p334)
• Desorption Energy of Oxygen Adsorbed on Un-Intentionally Doped Low Pressure Chemical Vapor Deposited Silicon Films
  Published in: Polycrystalline Semiconductors III (p151)
• Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis
  Published in: Polycrystalline Semiconductors III (p311)
• Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p385)
• Effect of Copper on the Breakthrough Voltage of Poly-Si - Poly-Si Capacitors
  Published in: Ultra Clean Processing of Silicon Surfaces V (p279)
• Excimer Laser Crystallized Poly-Si Thin-Film Transistors on a Plastic Substrate with Mobility of 250 cm²/V.s
  Published in: Polycrystalline Semiconductors VI (p169)
• Experimental Analysis for Low-Temperature Poly-Si Films Produced by Using the Excimer Laser Annealing Method
  Published in: Progress on Advanced Manufacture for Micro/Nano Technology 2005 (p277)
• Fabrication of 3C-SiC on SiO₂ Structures Using Wafer Bonding Techniques
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p223)