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Articles by keyword: «Polysilicon»

• A New Approach to Grain Boundary Engineering for Photovoltaic Polysilicon by Unidirectional and Rotational Solidification
  Published in: Recrystallization and Grain Growth III (p843)
• Addressing of Organic Electroluminescent Displays
  Published in: Polycrystalline Semiconductors VI (p385)
• Analysis of Tunneling Piezoresistive Effect of P-Type Polysilicon Nanofilms
  Published in: Micro and Nano Technology (p89)
• Characterization of Defects at the Si/SiO₂ Interface of a Polysilicon Gated MOS System by Monoenergetic Positrons
  Published in: Positron Annihilation - ICPA-11 (p718)
• Correlation between the Ageing and the Grain Size of Polysilicon Thin-Film Transistors
  Published in: Polycrystalline Semiconductors VI (p343)
• Design and Simulation of a Micromachined CMOS Temperature Sensor
  Published in: Micro and Nano Technology (p334)
• Desorption Energy of Oxygen Adsorbed on Un-Intentionally Doped Low Pressure Chemical Vapor Deposited Silicon Films
  Published in: Polycrystalline Semiconductors III (p151)
• Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis
  Published in: Polycrystalline Semiconductors III (p311)
• Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p385)
• Effect of Copper on the Breakthrough Voltage of Poly-Si - Poly-Si Capacitors
  Published in: Ultra Clean Processing of Silicon Surfaces V (p279)
• Fabrication of 3C-SiC on SiO₂ Structures Using Wafer Bonding Techniques
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p223)
• Gauge Factor and Nonlinearity of P-Type Polysilicon Nanofilms
  Published in: Micro and Nano Technology (p84)
• Gettering of Iron Using Electrically Inactive Boron Doped Layer
  Published in: Defects in Semiconductors 18 (p1991)
• Gettering Strategies for SOI Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p547)
• Grain Boundary Characteristics in Polysilicon
  Published in: Intergranular and Interphase Boundaries in Materials (p797)