| Paper Title | Page |
|---|---|
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In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction Authors: Peter Wellmann, Katja Konias, Philip Hens, Rainer Hock, Andreas Magerl |
23 |
|
Ab Initio Study of Silicon Carbide: Bulk and Surface Structures Authors: C. Raffy, L. Magaud, Elisabeth Blanquet, Michel Pons, A. Pasturel |
111 |
|
Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC Authors: Roland Weingärtner, Matthias Bickermann, Dieter Hofmann, Michael Rasp, Thomas L. Straubinger, Peter Wellmann, Albrecht Winnacker |
397 |
|
Calculation of Diffraction Patterns of Close-Packed Polytypes with Random Shearing Stacking Faults Authors: E.V. Shelekhov, T.A. Sviridova |
97 |
|
Calculation of Nonlinear Optical Susceptibilities for Different Polytypes of Silicon Carbide Authors: B. Adolph, Friedhelm Bechstedt |
287 |
|
Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy Authors: Anne Henry, Alexsandre Ellison, Urban Forsberg, Björn Magnusson, G.R. Pozina, Erik Janzén |
593 |
|
Crystal Growth of 15R-SiC Boules by Sublimation Method Authors: Taro Nishiguchi, Sohei Okada, Makato Sasaki, Hiroshi Harima, Shigehiro Nishino |
115 |
|
Devitrification and Crystallization of Zr40Ti10Cu50 Bulk Metallic Glass Authors: Mikhail Petrzhik, V.V. Molokanov, T.N. Mikhailova, Y.K. Kovneristyi, I.A. Kliger, T.A. Sviridova, N.P. Djakonova |
791 |
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Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions Authors: V. Ivantsov, Vladimir Dmitriev |
73 |
|
Authors: Kenji Fukuda, Seiji Suzuki, Junji Senzaki, Ryouji Kosugi, Kiyoko Nagai, Toshihiro Sekigawa, Hideyo Okushi, Sadafumi Yoshida, Tomoyuki Tanaka, Kazuo Arai |
1283 |