Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method

Authors: Im Gyu Yeo, Tae Woo Lee, Jong Hwi Park, Woo Sung Yang, Heui Bum Ryu, Mi Seon Park, Il Soo Kim, Byoung Chul Shin, Won Jae Lee, Tai Hee Eun, Seung Seok Lee, Myong Chuel Chun

Electronic Properties of SiC Polytypes and Heterostructures

Authors: Friedhelm Bechstedt

Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes

Authors: M.S. Miao, Walter R.L. Lambrecht

Equilibrium Growth Morphologies of SiC Polytypes

Authors: Stephan G. Müller, Robert Eckstein, R.F.P. Grimbergen, Dieter Hofmann, B. Rexer

Etching Kinetics of α-SiC Single Crystals by Molten KOH

Authors: Masakazu Katsuno, Noboru Ohtani, J. Takahashi, Hirokatsu Yashiro, M. Kanaya, S. Shinoyama

Extended Defects in SiC and GaN Semiconductors

Authors: P. Pirouz

Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders

Authors: Soo Hyung Seo, Joon Suk Song, Myung Hwan Oh, Yen Zen Wang

Illusion of New Polytypes

Authors: Ute Kaiser, A. Chuvilin, W. Richter

Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC

Authors: J. Takahashi, Noboru Ohtani, Masakazu Katsuno, S. Shinoyama

Interplay of Surface Structure, Bond Stacking and Heteropolytypic Growth of SiC

Authors: Ulrike Grossner, Andreas Fissel, J. Furthmüller, W. Richter, Friedhelm Bechstedt