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Articles by keyword: «Power Device»

• 10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p1025)
• 1400 V 4H-SiC Power MOSFETs
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p989)
• 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
  Published in: Silicon Carbide and Related Materials - 1999 (p1387)
• 4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules
  Published in: Silicon Carbide and Related Materials 2005 (p1163)
• 4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs
  Published in: Silicon Carbide and Related Materials - 1999 (p1275)
• A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of V_F, Current Saturation Capability and Fast Switching Speed
  Published in: Silicon Carbide and Related Materials 2009 (p1045)
• A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET
  Published in: Silicon Carbide and Related Materials 2001 (p1223)
• A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices
  Published in: Silicon Carbide and Related Materials 2000 (p623)
• Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers
  Published in: Silicon Carbide and Related Materials 2009 (p879)
• Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride
  Published in: Silicon Carbide and Related Materials 2010 (p812)
• Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors
  Published in: Silicon Carbide and Related Materials 2000 (p739)
• Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p717)
• Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range
  Published in: Silicon Carbide and Related Materials 2011 (p853)
• Critical Technical Issues in High Voltage SiC Power Devices
  Published in: Silicon Carbide and Related Materials 2007 (p895)
• Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
  Published in: Silicon Carbide and Related Materials 2009 (p1151)