| Paper Title | Page |
|---|---|
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4H-SiC Gate Turn-Off (GTO) Thyristor Development Authors: Jeff B. Casady, Anant K. Agarwal, L.B. Rowland, R.R. Siergiej, S. Seshadri, S. Mani, J. Barrows, D. Piccone, P.A. Sanger, C.D. Brandt |
1069 |
|
Developments in Hybrid Si – SiC Power Modules Authors: G. Skibinski, D. Braun, D. Kirschnik, R. Lukaszewski |
1141 |
|
Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature Authors: G.N. Kamaev, M.D. Efremov, V.A. Stuchinsky, B.I. Mihailov, S.G. Kurkin |
21 |
|
Electro-Thermal SPICE Model for High-Voltage SiC VJFETs Authors: Rudolf Elpelt, Peter Friedrichs, J. Hippeli, Reinhold Schörner, Michael Treu, Peter Türkes |
731 |
|
Authors: Tomasz Siostrzonek, Stanisław Piróg |
416 |
|
Fault Diagnosis Technology for Power Electronics Rectifier Based on Wavelet Packet Authors: Qing Hu, Rong Jie Wang, Lian Shi Lin |
1215 |
|
Flexible AC Transmission System Controllers: An Evaluation Authors: Pavlos S. Georgilakis, Peter G. Vernados |
399 |
|
It’s a Long Way to “Superhard” Semiconductors Authors: Christian Brylinski |
19 |
|
New Applications in Power Electronics Based on SiC Power Devices Authors: Hervé Morel, Dominique Bergogne, Dominique Planson, Brunp Allard, Régis Meuret |
925 |
|
Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors Authors: Hiromichi Ohashi |
21 |
Keyword:
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