Keyword: "Power Transistor"
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1600 V, 5.1 mΩ●cm2 4H-SiC BJT with a High Current Gain of β=70

Authors: Jian Hui Zhang, Petre Alexandrov, Jian H. Zhao

1155

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile

Authors: Jian Hui Zhang, Leonid Fursin, Xue Qing Li, Xiao Hui Wang, Jian H. Zhao, Brenda L. VanMil, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill

829

A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor

Authors: Jian Hui Zhang, Petre Alexandrov, Jian H. Zhao

1165

A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices

Authors: Jeff B. Casady, David C. Sheridan, Robin L. Kelley, Volodymyr Bondarenko, Andrew Ritenour

641

A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer

Authors: Jian H. Zhao, Jian Hui Zhang, Petre Alexandrov, Larry X. Li, Terry Burke

1173

A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at VBus=900V

Authors: Jian H. Zhao, Jian Hui Zhang, Petre Alexandrov, Terry Burke

1169

All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A

Authors: Yan Bin Luo, Leonid Fursin, Jian H. Zhao, Petre Alexandrov, B. Wright, M. Weiner

1325

High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors

Authors: Jian Hui Zhang, Petre Alexandrov, Jian H. Zhao

1149

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

Authors: Jian Hui Zhang, Jian H. Zhao, Xiao Hui Wang, Xue Qing Li, Leonid Fursin, Petre Alexandrov, Mari Anne Gagliardi, Mike Lange, Christopher Dries

710

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

Authors: Reza Ghandi, Benedetto Buono, Martin Domeij, Carl Mikael Zetterling, Mikael Östling

706

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