Papers by Keyword: RF Magnetron Sputtering

Abstract: Indium Tin Oxide (ITO) thin films were grown at room temperature (RT) in oxygen-free environment by rf-magnetron sputtering on glass and Si(100)-substrates. The effects of argon pressure, sputtering power and film thickness on the electrical and optical properties of ITO films were investigated. For a 100 nm thick ITO films grown at RT in argon pressure 1.95∙10^-3 mbar and sputtering power of 50 W, the transmittance was near 90% at 500 nm and resistivity was 5.4∙10^-4 Ohm∙cm. It has been shown that the sputtering power plays an important role in electric properties of ITO films. SEM images of these samples show smooth surface with sharp substrate/ITO interface.

Abstract: In this work, a thermally stable multilayered transparent conducting oxide (TCO) utilizing TiO2 antireflection thin film (arc-TiO2) encapsulated under indium tin oxide (ITO) glass has been prepared by RF magnetron sputtering. The novel tri-functional conducting substrate with blocking layer capabilities has been designed via step-down interference coating structure of double layer antireflection coating (DLAR). The mixed-oriented type between the strongest ITO peak at (222) and a weak TiO2 peaks at (101) orientations have been observed under XRD analysis. The antireflection properties of double-layer ITO/arc-TiO2 is evidence with the existence of two maximum peaks around 410 nm and 750 nm. While, the corresponding reduction in reflectance of about 8% and 2% compared to bare ITO was achieved. The ITO/arc-TiO2 blocking layers conserves the low resistivity of ITO at 2.05 x 10-4 Ω cm, even after oxidizing during air annealing process above 400 °C. These results demonstrate that the multilayered ITO/arc-TiO2 with tailored refractive index by means of annealing treatment is a promising approach to realize a substrate which (a): electrically and thermally stable against processing temperature, (b): sustains the higher transmittance of the substrate even there is increase in total substrate thickness and (c): prevents electron recombination process occurring at the interface between the redox electrolytes and the TCO surface. The stable properties are found to be beneficial for use as TCOs in DSSCs.

Abstract: TiO2 nanocoated mild steel surface has been successfully prepared via 100 watt of RF magnetron sputtering by using TiO2 target and sputtering condition was performed in 80sccm argon gas. The studied was done in comparing the surface properties of TiO2 nanocoated mild steel between short term and long term sputtering time at 5 and 60 minutes, respectively. From the results, we have found that the long-term sputtering time producing good surface coating with lower surface roughness at 0.033 nm with thickness in nanometer scale is 169 nm via AFM. Through Auger study revealed that the coating attributed Ti and O elements at energy of 383.48 eV and 483.44 eV, respectively. It was also showed that the intensity of that element high at about 100k a.u. in long-term compared to 55k a.u. short-term of sputtering time. It is thus showed that producing coating depends upon manipulation of parameter in RF magnetron sputtering.

Abstract: Titanium dioxide (TiO2) nanostructures were deposited on glass substrate by Radio Frequency (RF) magnetron sputtering. The samples deposited at various sputtering pressures and annealed at 723 K, were characterized using Atomic Force Microscope (AFM) to observe the surface morphology and topology, roughness properties and cross-sectional of TiO2 nanostructures, Field Emission Scanning Electrons Microscope (FESEM) to observe the particle sizes of TiO2 nanostructures and UV-vis spectroscopy to record the UV-vis transmission spectra. The aim of this paper is to determine which parameter of sputtering pressures influence the optimization of TiO2 nanostructures. AFM images show that the surface roughness of the samples decreases as the working pressures of sputtering increases. From FESEM images, it can be deduced that the higher the sputtering pressure, the smaller the particle size is. All the samples are highly transmittance with an average transmittance higher than 80% in the visible region as recorded by UV-vis transmission spectra. The relatively high transmittance of the sample indicates its low surface roughness and good homogeneity. For optimum TiO2 nanostructures deposited at various RF pressures it has the lowest surface roughness and the smallest TiO2 size particles with the indirect optical band gap of 3.41 eV.

Abstract: This review summarizes the current state of lead zirconium titanate (PZT) that used for energy storage based organic capacitor. The particular focus is on dielectric material PZT properties for achieving high-k dielectric constant (900-1300) concerning for DC power application. PZT is well known of its perovskite structure that related to excellent ferroelectric properties considered to have high remnant polarization and low coercive field. We review the recent literature that focused on the annealing process that affects dielectric constant and its structural property derived by radio frequency (RF) magnetron sputter.

Abstract: The improvement of sensitivity toward humidity by insertion of buffer layer has been investigated. The insertion of hetero- or homo-buffer layer of zinc oxide (ZnO) thin film before deposition of high quality ZnO had been reported for the growth on highly mismatched substrate. Three samples are characterized with different properties which are as deposited ZnO thin film without buffer layer (as deposited ZnO thin film) , anneal ZnO thin film without buffer layer (ZnO thin film) and anneal ZnO thin film with buffer layer (ZnO/ AZO thin film). The structural properties of ZnO thin film has been characterized field emission scanning electron microscopy (FESEM) JEOL JSM 6701F, atomic force microscope AFM (Park System XE-100) and XRD (Rigaku Ultima IV). The electrical and optical properties has been characterized using 2 point probe I-V measurement (Keithley 2400) and UV-Vis spectrophotometer (JASCO 670) respectively. In this work, we have focused on investigating the humidity sensitivity of ZnO thin film deposited using RF magnetron sputtering (SNTEK RSP 5004-PVD) with and without the buffer layer (Aluminum-doped ZnO (AZO)) for humidity sensor application.

Abstract: Optimization of titanium dioxide (TiO2) nanostructures deposited on glass substrate by Radio Frequency (RF) magnetron sputtering has been studied. The aim of this paper is to determine which parameter of RF powers influence the optimization of TiO2 nanostructures. The surface morphology and topology, roughness properties and cross-sectional of TiO2 nanostructures were observed by Atomic Force Microscope (AFM). The particle size of TiO2 nanostructures were observed by Field Emission Scanning Electrons Microscope (FESEM) and the UV-vis transmission spectra were recorded using UV-vis spectroscopy. The lowest surface roughness has the smallest average TiO2 size particle with indirect optical band gap of 3.39 eV for optimum TiO2 nanostructures deposited at varies RF power.

Abstract: Rutile N-doped TiO₂ thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.

Abstract: AlN dielectric thin films were deposited on N type Si(100) substrate by reactive radio frequency magnetron sputtering that directly bombardment AlN target under different sputtering-power and total pressure. The crystal structure,composition,surface and refractive index of the thin films were studied by XRD, SEM, AFM and elliptical polarization instrument. The results show that the surface and refractive of the thin films strongly depends on the sputtering-power and total pressure,the good uniformity and smoothness is found at 230 W, Ar flow ratio 5.0 LAr/sccm, substrate temperature 100°Cand 1.2 Pa. The crystal structure of the as-deposited thin-films is amorphous，then it transforms from blende structure to wurtzite structure as the rapid thermal annealing(RTA) temperature changes from 600 to 1200°C. The refractive index also increases with the RTA temperature it is increasing significantly from 800 to 1000°C．

Abstract: The Pb0.25Ba0.15Sr0.6TiO3 (PBST) thin films have been deposited on Pt/Ti/SiO2/Si substrates at different temperatures by radio frequency (rf) magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of PBST thin films were investigated as a function of deposition temperature. It’s found that the orientation of PBST thin films was adjusted by deposition temperature. The PBST thin film deposited at room temperature shows (100) preferred orientation and its dielectric constant and tunability are higher than that of PBST thin film deposited at 450 °C. Furthermore, the PBST thin film deposited at room temperature shows lower dielectric loss and leakage current, which makes it exhibit higher FOM of 49.47 for its appropriate tunability of 44.38% and low dielectric loss of 0.00897.