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Articles by keyword: «RTA»

• Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p111)
• Diffusion of Boron in Silicon and Silicon-Germanium in the Presence of Carbon
  Published in: Diffusion in Materials - DIMAT2004 (p998)
• Diffusion of Nickel and Zinc in Germanium
  Published in: Diffusion in Materials DIMAT 1996 (p1059)
• Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400ºC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
  Published in: Silicon Carbide and Related Materials 2005 (p1309)
• Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE
  Published in: Defects in Semiconductors 18 (p255)
• Phase Formation Sequence of Nickel Silicides from Rapid Thermal Annealing of Ni on 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p799)
• Rapid Thermal Annealing of Fe-Based Amorphous Ribbons
  Published in: Metastable, Mechanically Alloyed and Nanocrystalline Materials (p689)
• Source Resistance Analysis of SiC-MESFET
  Published in: Silicon Carbide and Related Materials 2000 (p711)
• The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons
  Published in: Positron Annihilation - ICPA-9 (p1491)