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Articles by keyword: «Radiation Defect»

• A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p367)
• Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p645)
• Defects in Implanted Hg_1-xCd_xTe: Electrical and Structural Characterization
  Published in: Defects and Diffusion in Semiconductors (p21)
• Doped Alkali Halide Thin Films as Active Media for Information Storage and Retrieval
  Published in: Defects in Insulating Materials (p721)
• Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p217)
• Effects of Illumination on Positron Lifetime of Electron Irradiated n-type 6H-SiC
  Published in: Positron Annihilation - ICPA-12 (p126)
• Electron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p825)
• Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p401)
• Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p154)
• Formation of the Buried Insulating Si_xN_y Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p187)
• Hydrogenated Radiation Defects in Silicon: Isotopic Effect of Hydrogen and Deuterium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p398)
• Influence of the Li Concentration on the Photoluminescence Spectra of Neutron-Irradiated Silicon:Passivation of Radiation Induced Centers
  Published in: Defects in Semiconductors 19 (p411)
• Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p393)
• Investigation of the X-Ray Storage Phosphors Cs₂NaYF₆:Pr³⁺, Ce³⁺
  Published in: Defects in Insulating Materials (p287)
• Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
  Published in: Silicon Carbide and Related Materials 2004 (p637)