Papers by Keyword: Radio Frequency Magnetron Sputtering

Abstract: N-doped ZnO films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering in N₂/Ar₂ gas mixture. After the deposition, the films were post-annealed in vacuum at several temperatures from 400°C to 850°C for 60 minutes respectively.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO films following post-annealing. When the annealing temperature is higher than 650°C achieved by the n-type ZnO to the p-type transition and for the better growth of p-type ZnO films, the optimal annealing temperature is 650°C.

Abstract: Results of research of mechanical properties of calciumphosphate coatings produced by the method radio frequency magnetron sputtering on bioinert alloys of titanium, zirconium and were presented. Calcium phosphate coatings show high value of adhesion strength to bioinert metal surface. Calcium phosphate coating on titanium-niobium alloy surface shows the highest value of adhesion strength. Mechanical properties of a composite material based on bioinert alloy and calcium phosphate coating are higher than properties of the components of composite material separately.

Abstract: Using radio frequency magnetron sputtering deposition deposit ZnO films on SiO₂ glass, and prepare vertical structure ZnO-based thin film transistor. By means of measurement, obtain the static output characteristics, the output current can achieve the order of milliampere, get the transfer characteristics of ZnO TFTs; transconductance which get the largest value g_m=0.0061S when source-drain voltage V_DS=3V, source-gate V_GS=0.4V; output resistance and voltage amplification coefficient, the smallest voltage amplification factor is μ=1.16056,still have voltage amplification effect.

Abstract: The micrographs and optical properties of Al-doped ZnO (AZO) films deposited by radio frequency (RF) magnetron sputtering are presented in this paper. The AZO films termed as films I, II and III were sputtered on glass substrates heating at 300C, 400C and 500C, respectively. The micrographs, crystal structures and optical properties of AZO thin films were analyzed by using scanning electronic microscopy (SEM) images, X-ray diffraction (XRD) pattern, optical transmission and reflection spectra ranging from 350 to 1000 nm. As the substrate temperature increases to 500C, the film III exhibits a better flatness surface and a larger grain size of ~25nm with a stronger c-axis orientation. The film II has a high transmittance of greater than 92% in the visible light region. We also show that the films II and III have significant red-shift band gap ~3.00 and ~3.13eV, respectively, in comparison with that of the film I (3.31eV). This might be due to the increasing doped Al atoms which do not activate due to segregation at the grain boundaries.

Abstract: In this work, zinc sulfide (ZnS) thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates. The effects of sputtering power, working pressure, substrate temperature and annealing treatment on the structural and optical properties of ZnS films were studied using X-ray diffraction and UV-visible spectrometer in detailed.

Abstract: Polycrystalline aluminum nitride (AlN) films were deposited on Si (111) substrates by radio frequency (RF) magnetron sputtering method in an nitrogen (N₂) + argon (Ar) gas mixture. The effect of the preparation conditions- sputtering pressure (p), sputtering power (w), gas mixture (Ar/N₂) and post-deposition annealing treatment -on the properties of AlN films were investigated by means of X-ray diffraction (XRD). Highly c-axis oriented AlN films were obtained with optimized growth parameters: p=0.3Pa, w=400w and Ar/N₂=2.

Abstract: In this work, cuprous oxide (Cu₂O) thin films grown on glass and polyethylene terephthalate (PET) substrates using reactive radio frequency magnetron sputtering system were investigated. Copper target with purity of 99.99% were used while high purity argon-oxygen gases were utilized as sputtering gases. Structural, morphological, and optical properties of the films were investigated by X-ray diffraction (XRD), atomic force microscopy and ultra-violet visible spectrophotometer. From the XRD results, only one single diffraction peak corresponding to cubic Cu₂O (111) crystal structure were observed for both substrates. The surface morphologies of the samples were in a form of pillar-like. Root mean square surface roughness for Cu₂O on glass and PET substrates were 3.37 nm and 3.20 nm, respectively. The films were highly transparent for wavelength above 600 nm. The Cu₂O films have direct band gap values of around 2.56 eV as determined by Taucs method.

Abstract: ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Abstract: Aluminum oxide-doped zinc oxide (AZO) films were deposited by radio frequency (RF) magnetron sputtering at various substrate temperatures and sputtering powers with pure argon flow. Their electrical and optical properties and microstructures were investigated by X-ray diffractometer (XRD), atomic force microscope (AFM), ultraviolet-visible spectrophotometer, four-probe tester. The investigation indicates that the electrical and optical properties and microstructures of the AZO films are remarkably influenced by substrate temperature and sputtering power. With the sputtering power increasing from 60W to 180W, the diffraction peaks rise significantly, the resistivity decreases quickly and the visible transmission is all quite high. When the substrate temperature increases from 25°C to 400°C, the diffraction peaks rise first and lower then both quickly, the resistivity decreases first sharply and then very slowly, and the visible transmission is also high. The films deposited at the substrate temperature 300°C with the sputtering power 180W have low resistivity 1.2×10^–3 Ω•cm and high transmittance 92% at the same time.

Abstract: The Cu thin films were prepared at room temperature by radio frequency magnetron sputtering on p-type Si (111) substrates. The surface morphology and interface reaction of Cu thin films were studied at different deposition condition by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that the existence of the native silicon oxide layer suppresses the interdiffusion and interface reaction of Cu and Si. The formation of the copper-silicide phase is observed by XRD when the annealing temperature arrives at 450 °C.