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Articles by keyword: «Rapid Thermal Annealing»

• A Light-Induced Annealing of Silicon Implanted Layers
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p229)
• Advanced Annealing Schemes for High-Performance SOI Logic Technologies
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p387)
• Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p689)
• Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
  Published in: Silicon Carbide and Related Materials - 2002 (p661)
• Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method
  Published in: Advances in Liquid Crystals (p444)
• Effect of Annealing on Magnetic Properties and Domain Structures of FePt Thin Films by Rapid Thermal Annealing Technique
  Published in: Multi-Functional Materials and Structures II (p911)
• Effect of Rapid Thermal Annealing Condition on the Structure and Conductivity Properties of Polycrystalline Silicon Films on Glass
  Published in: Functional and Electronic Materials (p634)
• Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts
  Published in: Silicon Carbide and Related Materials 2001 (p905)
• Effect of Rapid Thermal Annealing Time on the Structural and Optical Properties of Layered Structured SiO_x/Au/SiO_x Film
  Published in: Solid State Science and Technology XXVI (p221)
• Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer
  Published in: Silicon Carbide and Related Materials 2009 (p1009)
• Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p393)
• Equal Energy Driving Principle in Fabricating Poly-Si Thin Film
  Published in: Renewable and Sustainable Energy II (p55)
• Extended 'Five-Stream' Model for Diffusion of Implanted Dopants in Silicon during Ultra-Shallow Junction Formation in VLSI Circuits
  Published in: Diffusion and Diffusional Phase Transformations in Alloys (p107)
• Heat-Resistant Barrier Contacts Made on the Basis of TiB_x and ZrB_x to SiC and GaN
  Published in: Silicon Carbide and Related Materials 2008 (p565)
• Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
  Published in: Silicon Carbide and Related Materials 2008 (p549)