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Articles by keyword: «Reactive Ion Etching»

• 6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p925)
• A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices
  Published in: Silicon Carbide and Related Materials 2000 (p623)
• Damage in III-V Semiconductors from very Low-Energy Process Plasmas
  Published in: Defects and Diffusion in Semiconductors (p61)
• Defects Produced in Silicon by Reactive Ion Etching
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p371)
• Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p1199)
• Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p983)
• Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF₆/O₂ Plasma
  Published in: Silicon Carbide and Related Materials 2001 (p953)
• Electron Beam Induced Current Imaging of Silicon Oxide Damage Due to Reactive Ion Etching
  Published in: Polycrystalline Semiconductors IV (p359)
• Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE
  Published in: Silicon Carbide and Related Materials 2007 (p875)
• Fabrication of GaSb Microlenses by Photo and E-Beam Lithography and Dry Etching
  Published in: Functional Nanomaterials for Optoelectronics and other Applications (p83)
• Fabrication of Nanoscale SiC-Based Ceramic Patterns with Near-Zero Residual Layers by Using Imprinting Technique and Reactive Ion Etching
  Published in: Eco-Materials Processing & Design VII (p766)
• Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF₃
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p829)
• Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p1029)
• II: Ultra-Shallow Junction Cleaning: Methodologies for Process and Chemistry Optimization
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p133)
• Mechanism of Reactive Ion Etching of 6H-SiC in CHF₃/O₂ Gas Mixtures
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p825)