Papers by Keyword: Reactive Ion Etching (RIE)

Abstract: This paper presents the interaction relationships between Tetrafluoromethane (CF₄) gas, Oxygen (O₂) gas, and RF power in response to the surface roughness of an Aluminium deposited wafer after being etched using Reactive Ion Etching (RIE). The investigation was done using the three factors full factorial design of experiment (DOE). Analysis was done qualitatively by plotting the main interaction plots. The results suggest that strong interactions are present between CF₄ and RF power, CF₄ and O₂, and also O₂ and RF power due to the intersection of the graphs. This implies that all three factors have interaction between each other towards the surface roughness on the deposited Aluminium after RIE.

Abstract: Main effects contributing to the quality of surface roughness on an etched aluminium metallization wafer using Reactive Ion Etching (RIE) was studied. A total of three controllable process variables, with eight sets of experiments were scrutinized using an orderly designed design of experiment (DOE). The three variables in the investigation are composed of CF₄ gas, composed of O₂ gas and RF power while time is constant. The estimate of effect calculated for composition of CF₄ gas, composition of O₂ gas and RF power are-2.205, -0.975, and-0.525 respectively. All factors gave negative effects. This implies that the surface roughness increases when the content of CF₄, O₂, and RF power is lower. The results suggest that the composition of CF₄ gaseous as the most influential factor as its main effects plot has the steepest slope followed by oxygen and RF power.

Abstract: This paper investigates the factors that affect the surface roughness on an Aluminium deposited wafer after reactive ion etching (RIE) using a combination of Tetrafluoromethane (CF₄) and Oxygen (O₂) gaseous. A total of four controllable process variables, with 16 sets of experiments were scrutinized using an orderly designed design of experiment (DOE). The four variables in the investigation are the composition of CF₄ gas, the composition of O₂ gas, RF power, and time. The estimate of effect calculated for the composition of CF₄ gas, the composition of O₂ gas, RF power, and time are-0.9813, -0.7488, -0.0438, and 4.7138 respectively. All factors gave negative effects except for time. This implies that the surface roughness decreases when the content of CF₄, O₂, and RF power is high. The results indicate that time is the most influential factor compared to the other three factors and is directly proportional to the surface roughness of the etched Aluminium deposited wafer.

Abstract: Aluminium metallization has a disadvantage when it comes to high-end applications as it cannot withstand the high temperature and pressure. This paper studies the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of CF₄ and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are-6.3608, -3.2858, and-5.394 respectively. All three factors gave negative effects. This implies that the surface roughness decreases when ICP power, Bias power, and working pressure is high. The ICP Power is the most influential factor followed by working pressure, and bias power.

Abstract: This paper investigates the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of SF₆ and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are-4.9288, -6.2383, and-4.7223 respectively. All three factors gave negative effects. This implies that the surface roughness decreases when ICP power, Bias power, and working pressure is high. The Bias Power is the most influential factor followed by ICP Power, and working pressure.

Abstract: As the world of semiconductor is moving towards smaller and high-end applications, the quality of the bonding adhesion for wire bonding is very critical. Although aluminium has been the metallization of choice in integrated circuits, it can be easily oxidized during high temperature and pressure. On the other hand, Platinum metallization layer has high thermal coefficient resistance and inert to oxygen. This paper reports the correlation between surface roughness and the wettability in the form of contact angle for Platinum deposited wafer etched using Inductively Couple Plasma-Reactive Ion Etching (ICP-RIE). Surface roughness was measured using AFM while contact angle was obtained via droplet test. The results clearly suggested that both surface roughness and wettabily, calculated by its contact angle value has the same trend. Surface roughness is directly proportional to the contact angle. This indicates that surface roughness have great influence on the surface wettability. Therefore, the adhesion for wire bonding process on platinum metallization which can be used in high end applications can be controlled by its surface roughness and wettability.

Abstract: The roughness of etched SiC surfaces must be minimized to obtain surfaces with a smooth aspect, avoiding micromasking artifacts originating from re-deposited particles during the etching process. Four varieties of masks, Al, Ni, Si and C, were deposited on the SiC surface by photolithographic process. The C structures were formed by annealing conversion of patterned thick photoresist. On these surfaces, dry etching was performed with an SF6/O2 plasma produced in a Reactive-Ion-Etching (RIE) reactor. Although a better aspect of the surface is obtained with Ni in comparison with Al mask, micromasking could also occur even with Ni if the mask design was not enough spaced out. With C and Si masks, which produce fluorides species with negative boiling temperature, smooth etched surface was obtained without micromasking, even for tight masks covering up to 90% of the SiC surface.

Abstract: The effects of oxygen (O2) reactive ion etching (RIE) on the field emission (FE) properties of aligned CuO nanowire films are investigated systematically. It is found that the FE performance of the films is largely enhanced after initial exposure to reactive oxygen ions but degrades after extended treatment. As comparison, Ar RIE is also used to treat CuO nanowires, which, however, results in the deterioration of FE properties. The enhanced FE after O2 RIE is attributed to the shaper morphology, cleaner surface and better conductivity. On the other hand, increased work function and non-crystallized surface structure cause the deterioration of FE of CuO nanowires after Ar RIE treatments.