Papers by Keyword: Remanent Polarization

Abstract: Chemical composition Pb_0.97La_0.02(Zr_0.75Sn_0.136Ti_0.114)O₃ (PLZST) ceramic was fabricated by conventional solid-state reaction of oxide method. The composition is close to the AFE/FE phase boundary of PLZST ceramic phase diagram. The dependence of remanent polarization of Pb (Zr,Sn,Ti)O₃ ceramic poled under different electric fields on hydrostatic pressure was investigated with special hydrostatic pressure equipment. The results show that PLZST ceramic poled at different DC electric field is metastable state ferroelectric phase. The remanent polarization decreases sharply and is depolarization completely when hydrostatic pressure increases to a bound.

Abstract: Single crystal of ferroelectric (Bi,Na)TiO₃BaTiO₃ (BNTBT) with tetragonal P4mm structure grown by a top-seeded solution growth (TSSG) method at a high oxygen pressure (PO₂) of 0.9 MPa and their properties were compared with those of the crystals grown at a PO₂ of 0.1 MPa. The crystals obtained at PO₂ = 0.9 MPa exhibited a remanent polarization (P_r) of 54 μC/cm², which was much larger than those of the crystals grown at PO₂ = 0.1 MPa (20 μC/cm²). It is suggested that the large P_r is attributed to a low oxygen vacancy concentration.

Abstract: Changes of residual stress and electrical properties were examined in (001)-oriented and (111)-oriented Pb(Zr0.5Ti0.5)O3 (PZT) thin films deposited on a buffered-Si substrate with a buffer and bottom electrode layer of a (La,Sr)CoO3(LSCO). A (001)-epitaxial PZT film was prepared on LSCO/CeO2 /Zr0.85Y0.15O1.93(YSZ)/Si. In addition, a (111)-oriented PZT film was prepared on LSCO/SrTiO3(ST) /Mn0.24Zn0.09Fe2.67O4(MZF)/YSZ/Si. The residual tensile stress in (001)-PZT thin films decreased from 2.92 to 1.98 GPa and the remanent polarization increased from 7.5 to 41.7 @C/cm2 as the LSCO thickness increased. In (111)-PZT, the residual tensile stress decreased from 1.72 to 0.95 GPa and remanent polarization increased from 9.5 to 26.7 @C/cm2. The residual tensile stress of (111)-PZT was less than that of (001)-PZT. The remanent polarization in the 80 nm (111)-PZT was greater than that of the 60 nm (001)-PZT. In the 700-nm-thick PZT, the remanent polarization in (001)-PZT was greater than that in (111)-PZT.