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Articles by keyword: «Rutherford Backscattering»

• Annealing Behavior of Defects in Multiple-Energy Nitrogen Implanted ZnO Bulk Single Crystal
  Published in: Silicon Carbide and Related Materials 2007 (p1361)
• Corrosion Depth Profiles by Rutherford Backscattering Spectrometry and Synchrotron X-Ray Reflrectometry
  Published in: Materials Science Applications of Ion Beam Techniques (p365)
• Damage Evolution and Recovery in Al-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p815)
• Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p343)
• Epitaxial Growth and Defect Microstructures of Vanadium Dioxide Thin Films on Sapphire Substrates
  Published in: Defects and Diffusion in Ceramics (p137)
• Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p873)
• He Ion Beam Channeling in Bi₂Sr₂CaCu₂O_y Single Crystals and Iodine Intercalated Compounds I_xBi₂Sr₂CaCu₂O_y
  Published in: Asian Ceramic Science for Electronics I (p259)
• Hydrogen Elastic Recoil Detection Depth Resolution and Sensitivity as a Function of Sample Composition
  Published in: Materials Science Applications of Ion Beam Techniques (p369)
• Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption
  Published in: Positron Annihilation - ICPA-9 (p1439)
• Ion-Beam Analysis of Solar-Cell Materials
  Published in: Materials Science Applications of Ion Beam Techniques (p351)
• Ion-Beam Archaeometry of Islamic Lustre Glazes
  Published in: Euro Ceramics V (p1434)
• Progress in Non-Standard Defect Analysis by RBS
  Published in: Materials Science Applications of Ion Beam Techniques (p327)
• RBS Study of Multilayer Structure Material of Si/SiO₂ Nano Films
  Published in: Advances in Innovative Materials and Applications (p310)
• Spatial Distribution of Pr³⁺ and F^- Ions in Ca_1-xPr_xF_2+x Luminescent Thin Films
  Published in: Rare Earths '98 (p236)
• Thermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum Wells
  Published in: Defects in Semiconductors 17 (p605)