| Paper Title | Page |
|---|---|
|
Annealing Behavior of Defects in Multiple-Energy Nitrogen Implanted ZnO Bulk Single Crystal Authors: K. Kuriyama, K. Matsumoto, M. Ooi, K. Kushida |
1361 |
|
Authors: E. Szilágyi, L. Bottyán, L. Deák, E. Gerdau, V.N. Gittsovich, A. Gróf, E. Kótai, O. Leupold, D.L. Nagy, V.G. Semenov |
365 |
|
Damage Evolution and Recovery in Al-Implanted 4H-SiC Authors: Yu Long Zhang, William J. Weber, Weilin Jiang, Anders Hallén, G. Possnert |
815 |
|
Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC Authors: M. Obernhofer, Michael Krieger, Frank Schmid, Heiko B. Weber, Gerhard Pensl, Adolf Schöner |
343 |
|
Epitaxial Growth and Defect Microstructures of Vanadium Dioxide Thin Films on Sapphire Substrates Authors: Z.P. Wu |
137 |
|
Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide Authors: Y. Hishida, Masanori Watanabe, Koichi Nakashima, Osamu Eryu |
873 |
|
Authors: Etsuro Sugimata, Kentaro Ohhashi, Shoichi Nasu, Shinji Nagata |
259 |
|
Authors: L.S. Wielunski, G.L. Harding, A. Bendavid |
369 |
|
Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption Authors: P.J. Simpson, M. Vos, I.V. Mitchell, C. Wu, P.J. Schultz |
1439 |
|
Ion-Beam Analysis of Solar-Cell Materials Authors: H. Metzner |
351 |