Papers by Keyword: SIMS

Abstract: In this study, 4H-SiC bonded substrates (bonded-SiC) with an average resistivity of 2.4–31.5 mΩ·cm were prepared, and attention has been directed toward the relationship between the resistivity of bonded-SiC and the contact resistance at the backside where metal Ti/Ni was applied. A circular transmission line model (cTLM) was used to accurately measure the backside contact resistance. A linear correlation was found between and the resistivity of bonded-SiCs at room temperature (RT). This result indicates the existence of a threshold resistivity at which the specific contact resistance in the range of 2.2 × 10⁻⁶ to 1.5 × 10⁻⁵ Ω·cm² can be achieved without contact annealing; it also indicates that the temperature dependence of between 17.4 and 34.4 mΩ·cm is eliminated. This phenomenon can occur because is dominated by tunneling current above the nitrogen concentration at the threshold resistivity, which is driven by the high nitrogen concentration and sufficient carrier activation in the polycrystalline portion (polycrystalline layer) of bonded-SiCs. These are important properties resulting from a polycrystalline layer with a 3C structure in bonded-SiC.

Abstract: The impact on doping profile, surface roughness and defect production of each process step for a suggested Multiple epitaxy and implantation (MEI) process for Super-junction has been investigated through Secondary Ion Mass Spectrometer (SIMS), Atomic Force Microscope (AFM), Deep Level Transient Spectroscope (DLTS) and Molten KOH etching. Results show that the suggested process can possibly reduce the cost of the original fabrication and speed up the process.

Abstract: Semiconductor devices rely on the incorporation of donor and acceptor atoms into the crystal lattice to form locally doped regions. For dopant atoms incorporated into SiC by ion implantation, a high-temperature annealing step is required to achieve electrical activation. This annealing step is accompanied by redistribution of the implanted atoms. The influence of the annealing parameters on dopant redistribution is crucial when aiming for ever smaller device dimensions. In this work, we present a consistent analysis of the diffusion of Al implanted in 4H-SiC after high-temperature annealing at 1650 °C and 1800 °C for different annealing times. We identify the equilibrium diffusion coefficient at long annealing times from Al profiles obtained by SIMS analyses for both annealing temperatures. The temperature dependence is determined using an Arrhenius representation. This allows to quantify the equilibrium diffusion lengths for the actual temperature profiles, including heating and cooling rates. We find that the measured diffusion lengths for short annealing times are larger than expected from equilibrium diffusion and attribute the excess length to transient enhanced diffusion. Comparing the transient diffusion lengths of room-temperature and 500 °C-implanted samples, we conclude that the transient behavior is likely related to residual crystal damage induced during the implantation process.

Abstract: In all implantations into crystalline targets, quite a few ions find a path along a crystal channel or plane, so called channeling, and these ions travel deep into the crystal. This paper treats aluminum (Al) implantation in 4H-SiC and show how the crystal lattice will guide incoming ions deep into the target and modify the final dopant distribution. 4H-SiC samples have been implanted with 100 keV Al-ions, in a “random” direction using the wafer miscut angle of 4°, as well as with the impact beam aligned anti-parallel to the [0001] direction. Aluminium concentration versus depth profiles has been recorded by secondary ion mass spectrometry (SIMS). To track the most probable ion paths during stopping process, SIIMPL, a Monte Carlo simulation code based on the binary collision approximation (MC-BCA) has been used. In addition, the remaining ion energy has been extracted from SIIMPL at various depth along the ion path. Our results show that, independent of the used impact angle, some ions will be steered by crystal planes predominantly into the direction and also along the six directions. The energy loss is smaller along these low index axes. Therefore, at a depth of 1.2 μm, some Al ions along a path may still have kinetic energy, more than 40% of the original 100 keV, and continues to move deep into the SiC sample. The mean projected range of 100 keV ions in 4H-SiC is about 120 nm.

Abstract: Diamond and Silicon Carbide (SiC) are promising wide band-gap semiconductors for power electronics, SiC being more mature especially in term of large wafer size (200 mm). Nitrogen impurities are often used in both materials for different purpose: increase the diamond growth rate or induce n-type conductivity in SiC. The determination of the nitrogen content by secondary ion mass spectrometry (SIMS) is a difficult task mainly because nitrogen is an atmospheric element for which direct monitoring of N^± ions give no or a weak signal. With our standard diamond SIMS conditions, we investigate ¹²C¹⁴N^- secondary ions under cesium primary ions by applying high mass resolution settings. Nitrogen depth-profiling of diamond and SiC (multi-) layers is then possible over several micrometer thick over reasonable time analysis duration. In a simple way and without notably modifying our usual analysis process, we found a nitrogen detection limit of 2x10¹⁷ at/cm³ in diamond and 5x10¹⁵ at/cm³ in SiC.

Abstract: Cathode materials based on lithium-metal-oxide compounds are an essential technical component for lithium-ion batteries, which are still being researched and continuously improved. For a fundamental understanding of kinetic processes at and in electrodes the Li diffusion is of high relevance. Most cathode materials are based on the layered LiCoO₂ (LCO) and LiNi_0.33Mn_0.33Co_0.33O₂ (NMC₃₃₃). In the present study Li tracer self-diffusion is investigated in polycrystalline sintered bulk samples of sub-stoichiometric Li_0.9CoO₂ at 145 °C ≤ T ≤ 350 °C and compared to Li_0.9Ni_0.33Mn_0.33Co_0.33O₂ in the temperature range between 110 and 350 °C. For analysis, stable ⁶Li tracers are used in combination with secondary ion mass spectrometry (SIMS). The Li tracer diffusivities D^* of both compounds with a sub-stoichiometric Li concentration are identical within error limits and can be described by the Arrhenius law with an activation enthalpy of (0.76 ± 0.13) eV for LCO and (0.85 ± 0.03) eV for NMC₃₃₃, which is interpreted as the migration energy of a single Li vacancy. This means that a modification of the transition metal (M) layer composition within the LiMO₂ structure does not significantly influence lithium diffusion in the temperature range investigated.

Abstract: Tracer diffusion is one of most reliable techniques for providing basic kinetic data in solids. In the present review, selected direct methods, in particular the radiotracer measurements as a superior technique due to its high sensitivity, Secondary-Ion-Mass-Spectroscopy (SIMS) profiling, X-Ray Diffraction measurements and Rutherford Backscattering Spectrometry are presented and discussed. Special attention is put on the radiotracer technique describing the currently used sectioning techniques in detail with a focus on the experimental applications and complications. The relevant experimental results are exemplary shown. Furthermore, the most recent developments and advances related to the combined tracer/inter-diffusion measurements are highlighted. It is shown that this approach offers possibilities to provide the concentration-dependent tracer diffusion coefficients of the constituting elements in multi-component alloys in high-throughput experiments. Possibilities of estimating the tracer diffusion coefficients following different types of diffusion couple methods in binary and multicomponent systems are briefly introduced. Finally, specificity of SIMS analysis of diffusion in fine-grained materials are carefully analyzed. If applicable, a direct comparison of the results obtained by different techniques is given.

Abstract: Channeling phenomena during ion implantation have been studied for 50 keV ¹¹B, 100 keV ²⁷Al and 240 keV ⁷¹Ga in 4H-SiC by secondary ion mass spectrometry and medium energy ion backscattering. The same projected range are expected for the used energies while the channeling tails are shown to be substantially different, for example, channeled ⁷¹Ga ions may travel 5 times as deep as ¹¹B. Ion implantation has been performed both at room temperature (RT) and 400 °C, where channeling effects are reduced for the 400 °C implantation compared to that of the RT due to thermal vibrations of lattice atoms. The temperature effect is pronounced for ⁷¹Ga but nearly negligible for ¹¹B at the used energies. The channeling phenomena are explained by three-dimensional Monte Carlo simulations. For standard implantations, i.e. 4° off the c-direction, it is found that a direction in-between the [000-1] and the <11-2-3> crystal channels, results in deep channeling tails where the implanted ions follow the [000-1] and the <11-2-3> directions.

Abstract: The defect structure of Mg implanted GaN substrate was evaluated by TEM observations, AFM surface observations and Raman scattering spectroscopic analysis. Mg ions were implanted at room temperature (RT) and 500 °C. TEM results showed that the defect distribution along depth scale is different between RT and 500 °C condition. The several peaks originated from ion implantation were found from Raman scattering spectra and the characteristics of the defects by implantation were discussed. The crystal quality of the sample implanted at 500 °C was found to be better than that of RT by comparing the FWHM of the E₂ peak.

Abstract: Channeling of B and Al ions in 4H-SiC(0001), has been investigated by secondary ion mass spectrometry (SIMS). Ion implantations have been performed between room temperature (RT) and 600 °C at various fluences. Before implantation, the major crystal axes were determined and the sample was aligned using the blocking pattern of backscattered protons. As expected, the depth distribution of the implanted ions along a crystal direction penetrates much deeper compared to non-channeling directions. At elevated temperatures, the channeling depth for 100 keV Al-ions is decreased due to lattice vibrations. For 50 keV B-ions, the temperature effect is minor, indicating a smaller interaction between target atoms and B. Simulations has been performed using SIIMPL, a Monte Carlo simulation code based on the binary collision approximation, to predict experimental data and get a deeper insight in the channeling process.