Papers by Keyword: Sb₂Te₃ Thin Film

Abstract: N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films have been prepared by RF and DC co-sputtering. The Seebeck coefficient of n-type Bi2Te3 and p-type Sb2Te3 thin films is about -122 μVK-1 and 108 μVK-1, the power factor is about 0.82×10-3 Wm-1K-2 and 1.60×10-3 Wm-1K-2. Then, the films have been selected to fabricate the thin film thermoelectric generator. The results show that the open-circuit voltage of 12.2 mV and the output power of 3.32 μW are obtained for a thin film generator with the temperature difference at 60 K.

Abstract: Sb₂Te₃ thin films with thickness of 70, 100, 300, and 600nm were co-evaporated by vacuum evaporation. These films were annealed by 423K, 473K, 523K and 573K, respectively, in the protection of N₂ ambient. After that, the film structures were investigated by XRD. Composition of the films was surveyed XRF and XPS. Stoichiometric Sb₂Te₃ thin films were prepared. Then the Sb₂Te₃ thin films were applied to CdTe thin film solar cells as back contact layer. The influence of Sb₂Te₃ thin films thickness on the performances of CdS/CdTe thin film solar cells were surveyed by light I-V characteristics and an efficiency of 12.27%, Voc=808.2mV, Jsc=25.1mA/cm², FF= 0.6051 was obtained.