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Articles by keyword: «Schottky»

• 4H-SiC Device Scaling Development on Repaired Micropipe Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p1203)
• 6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p925)
• Advances in SiC Materials and Technology for Schottky Diode Applications
  Published in: Silicon Carbide and Related Materials 2001 (p1119)
• Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p1323)
• Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination
  Published in: Silicon Carbide and Related Materials 2000 (p687)
• Development of a Microstrip SiC MMIC Process
  Published in: Silicon Carbide and Related Materials 2005 (p1123)
• Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon
  Published in: Advanced Materials Forum II (p96)
• Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
  Published in: Silicon Carbide and Related Materials 2011 (p129)
• Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p1285)
• Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers
  Published in: Silicon Carbide and Related Materials 2001 (p925)
• Ellipsometric and XPS Studies of 4H-SiC/SiO₂ Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces
  Published in: Silicon Carbide and Related Materials 2005 (p1027)
• High Temperature Capability of High Voltage 4H-SiC JBS
  Published in: HeteroSiC & WASMPE 2011 (p124)
• High Temperature Hydrocarbon Sensing with Pt-Thin Ga₂O₃-SiC Diodes
  Published in: Silicon Carbide and Related Materials 2004 (p1033)
• High Voltage 4H SiC Rectifiers Using Pt and Ni Metallization
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p937)
• High-Current 10 kV SiC JBS Rectifier Performance
  Published in: Silicon Carbide and Related Materials 2007 (p943)