HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «Schottky Barrier Diode»

• 4.6 kV, 10.5 mOhm×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2009 (p897)
• A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses
  Published in: Silicon Carbide and Related Materials 2009 (p885)
• Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers
  Published in: Silicon Carbide and Related Materials 2009 (p879)
• Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p227)
• Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”
  Published in: Silicon Carbide and Related Materials 2009 (p1227)
• Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode
  Published in: Silicon Carbide and Related Materials 2010 (p820)
• Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
  Published in: Silicon Carbide and Related Materials 2011 (p371)
• Diamond Vertical Schottky Barrier Diode with Al₂O₃ Field Plate
  Published in: Silicon Carbide and Related Materials 2011 (p1319)
• Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation
  Published in: Silicon Carbide and Related Materials 2009 (p1211)
• Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature
  Published in: Silicon Carbide and Related Materials 2011 (p917)
• Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height
  Published in: Silicon Carbide and Related Materials 2009 (p893)
• Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
  Published in: Silicon Carbide and Related Materials 2009 (p889)
• High Temperature Characteristics of Diamond SBDs
  Published in: Silicon Carbide and Related Materials 2009 (p1231)
• Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
  Published in: Silicon Carbide and Related Materials 2011 (p911)
• Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p119)