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Articles by keyword: «Schottky Contact»

• A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p911)
• An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors
  Published in: Polycrystalline Semiconductors V (p553)
• Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials - 2002 (p709)
• Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials - 1999 (p1239)
• Characterization of Schottky Contact on p-type 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p1227)
• Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p331)
• Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
  Published in: Silicon Carbide and Related Materials 2008 (p235)
• Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p929)
• Electrical Activity of Structural Defects in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p273)
• Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
  Published in: Silicon Carbide and Related Materials 2007 (p1341)
• Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
  Published in: Silicon Carbide and Related Materials 2008 (p959)
• Formation of Large Area Al Contacts on 6H- and 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2000 (p603)
• Forward Bias Capacitance-Voltage Measurements on Semiconductors Using Co-Planar Ohmic and Schottky Contacts in a Cylindrical Geometry
  Published in: Journal of Nano Research Vol. 12 (p45)
• High Voltage Schottky Barrier Diodes on P-Type 4H and 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p933)
• Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p461)