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Articles by keyword: «Schottky Diode»

• 1700 V SiC Schottky Diodes Scaled to 25 A
  Published in: Silicon Carbide and Related Materials 2000 (p675)
• 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
  Published in: Silicon Carbide and Related Materials 2010 (p555)
• 3.6 kV 4H-SiC JBS Diodes with Low RonS
  Published in: Silicon Carbide and Related Materials - 1999 (p1183)
• 4,308V, 20.9 mΩ-cm² 4H-SiC MPS Diodes Based on a 30μm Drift Layer
  Published in: Silicon Carbide and Related Materials 2003 (p1109)
• 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200ºC Baseplate Temperature
  Published in: Silicon Carbide and Related Materials 2005 (p1445)
• 4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW
  Published in: Silicon Carbide and Related Materials 2001 (p1177)
• 4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect
  Published in: Silicon Carbide and Related Materials 2006 (p945)
• 4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts
  Published in: Silicon Carbide and Related Materials 2008 (p647)
• 4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments
  Published in: Silicon Carbide and Related Materials 2010 (p575)
• 4H-SiC Trench Structure Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2011 (p933)
• 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage
  Published in: Silicon Carbide and Related Materials - 1999 (p1219)
• A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p945)
• A Fully Electrically Isolated Package for High Temperature SiC Sensors
  Published in: Silicon Carbide and Related Materials 2011 (p925)
• A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFET^TM Switch
  Published in: Silicon Carbide and Related Materials 2007 (p1235)
• A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications
  Published in: Silicon Carbide and Related Materials 2005 (p1155)